Abstract
The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.
| Original language | English |
|---|---|
| Pages (from-to) | 6605-6611 |
| Number of pages | 7 |
| Journal | ACS Nano |
| Volume | 11 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 25 Jul 2017 |
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Keywords
- Bragg ptychography
- Finite Element Method
- GaN
- InGaN
- nanowire
ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)
Cite this
X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire. / Dzhigaev, Dmitry; Stankevič, Tomaš; Bi, Zhaoxia; Lazarev, Sergey; Rose, Max; Shabalin, Anatoly; Reinhardt, Juliane; Mikkelsen, Anders; Samuelson, Lars; Falkenberg, Gerald; Feidenhans'L, Robert; Vartanyants, Ivan A.
In: ACS Nano, Vol. 11, No. 7, 25.07.2017, p. 6605-6611.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire
AU - Dzhigaev, Dmitry
AU - Stankevič, Tomaš
AU - Bi, Zhaoxia
AU - Lazarev, Sergey
AU - Rose, Max
AU - Shabalin, Anatoly
AU - Reinhardt, Juliane
AU - Mikkelsen, Anders
AU - Samuelson, Lars
AU - Falkenberg, Gerald
AU - Feidenhans'L, Robert
AU - Vartanyants, Ivan A.
PY - 2017/7/25
Y1 - 2017/7/25
N2 - The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.
AB - The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.
KW - Bragg ptychography
KW - Finite Element Method
KW - GaN
KW - InGaN
KW - nanowire
UR - http://www.scopus.com/inward/record.url?scp=85026311468&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85026311468&partnerID=8YFLogxK
U2 - 10.1021/acsnano.6b08122
DO - 10.1021/acsnano.6b08122
M3 - Article
VL - 11
SP - 6605
EP - 6611
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 7
ER -