Abstract
In the paper, the block diagram and some highlights of transfer microwave radio pulse module based on Gunn diode of 3A768 is considered. Dependences of the diode current and output power on bias voltage are investigated. Characteristics of transmitter are resulted. Output power of 10 Wt in a range of temperatures of ± 50°C is reached.
| Original language | English |
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| Title of host publication | Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | 2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Russian Federation Duration: 18 Sep 2012 → 21 Sep 2012 |
Other
| Other | 2012 7th International Forum on Strategic Technology, IFOST 2012 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 18.9.12 → 21.9.12 |
Keywords
- control of amplitude
- Gunn diode characterization
- pulse transmitter
- stability of parameters
- the powerful generator
ASJC Scopus subject areas
- Management of Technology and Innovation
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Pushkarev, V. P., Kochumeev, V. A., & Stukach, O. V. (2012). X-band pulse generator based on Gunn diode. In Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012 [6357673] https://doi.org/10.1109/IFOST.2012.6357673