Abstract
From the technical and design points of view, it is quite difficult to maintain the integrity of nano-films during the deposition process to fabricate practical devices based on ultra-thin semiconductor films. Thus, defect-free wafer-scaled development of ultra-thin quasi two-dimensional (2D) oxide semiconductor films represents serious challenges. Plasma-enhanced atomic layer deposition (PE-ALD) made it possible to fabricate ultra-thin MoO3 nano-films (4.6 nm) over the wafer-scaled granular Au electrode. The detailed ALD recipe for ultra-thin MoO3 film was established and verified. The C12H30N4Mo and O2 plasma were used as Mo precursor and oxygen source, respectively. The growth of crystalline phases was observed when the ALD temperature of 250 °C was employed. Higher ALD temperature resulted in an increase of growth rate over Au substrate (1.21 Ǻ/cycle). The precise recipe design enabled the scalable fabrication of environmental sensors based on ultra-thin MoO3 films with precise thickness controllability. Electrochemical sensors based on the fabricated MoO3 nanostructures demonstrated reliable performance to hydrazine (N2H4) detection.
| Original language | English |
|---|---|
| Pages (from-to) | 135-144 |
| Number of pages | 10 |
| Journal | Materials and Design |
| Volume | 149 |
| DOIs | |
| Publication status | Published - 5 Jul 2018 |
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Keywords
- Atomic layer deposition
- Electrochemical sensor
- MoO
- Semiconductor films
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
Cite this
Ultra-thin MoO3 film goes wafer-scaled nano-architectonics by atomic layer deposition. / Xu, Hongyan; Akbari, Mohammad Karbalaei; Hai, Zhenyin; Wei, Zihan; Hyde, Lachlan; Verpoort, Francis; Xue, Chenyang; Zhuiykov, Serge.
In: Materials and Design, Vol. 149, 05.07.2018, p. 135-144.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultra-thin MoO3 film goes wafer-scaled nano-architectonics by atomic layer deposition
AU - Xu, Hongyan
AU - Akbari, Mohammad Karbalaei
AU - Hai, Zhenyin
AU - Wei, Zihan
AU - Hyde, Lachlan
AU - Verpoort, Francis
AU - Xue, Chenyang
AU - Zhuiykov, Serge
PY - 2018/7/5
Y1 - 2018/7/5
N2 - From the technical and design points of view, it is quite difficult to maintain the integrity of nano-films during the deposition process to fabricate practical devices based on ultra-thin semiconductor films. Thus, defect-free wafer-scaled development of ultra-thin quasi two-dimensional (2D) oxide semiconductor films represents serious challenges. Plasma-enhanced atomic layer deposition (PE-ALD) made it possible to fabricate ultra-thin MoO3 nano-films (4.6 nm) over the wafer-scaled granular Au electrode. The detailed ALD recipe for ultra-thin MoO3 film was established and verified. The C12H30N4Mo and O2 plasma were used as Mo precursor and oxygen source, respectively. The growth of crystalline phases was observed when the ALD temperature of 250 °C was employed. Higher ALD temperature resulted in an increase of growth rate over Au substrate (1.21 Ǻ/cycle). The precise recipe design enabled the scalable fabrication of environmental sensors based on ultra-thin MoO3 films with precise thickness controllability. Electrochemical sensors based on the fabricated MoO3 nanostructures demonstrated reliable performance to hydrazine (N2H4) detection.
AB - From the technical and design points of view, it is quite difficult to maintain the integrity of nano-films during the deposition process to fabricate practical devices based on ultra-thin semiconductor films. Thus, defect-free wafer-scaled development of ultra-thin quasi two-dimensional (2D) oxide semiconductor films represents serious challenges. Plasma-enhanced atomic layer deposition (PE-ALD) made it possible to fabricate ultra-thin MoO3 nano-films (4.6 nm) over the wafer-scaled granular Au electrode. The detailed ALD recipe for ultra-thin MoO3 film was established and verified. The C12H30N4Mo and O2 plasma were used as Mo precursor and oxygen source, respectively. The growth of crystalline phases was observed when the ALD temperature of 250 °C was employed. Higher ALD temperature resulted in an increase of growth rate over Au substrate (1.21 Ǻ/cycle). The precise recipe design enabled the scalable fabrication of environmental sensors based on ultra-thin MoO3 films with precise thickness controllability. Electrochemical sensors based on the fabricated MoO3 nanostructures demonstrated reliable performance to hydrazine (N2H4) detection.
KW - Atomic layer deposition
KW - Electrochemical sensor
KW - MoO
KW - Semiconductor films
UR - http://www.scopus.com/inward/record.url?scp=85045376911&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85045376911&partnerID=8YFLogxK
U2 - 10.1016/j.matdes.2018.04.007
DO - 10.1016/j.matdes.2018.04.007
M3 - Article
VL - 149
SP - 135
EP - 144
JO - Materials and Design
JF - Materials and Design
SN - 0261-3069
ER -