Abstract
A nanofabrication method for the production of ultra-dense planar metallic nanowire arrays scalable to wafer-size is presented. The method is based on an efficient template deposition process to grow diverse metallic nanowire arrays with extreme regularity in only two steps. First, III–V semiconductor substrates are irradiated by a low-energy ion beam at an elevated temperature, forming a highly ordered nanogroove pattern by a “reverse epitaxy” process due to self-assembly of surface vacancies. Second, diverse metallic nanowire arrays (Au, Fe, Ni, Co, FeAl alloy) are fabricated on these III–V templates by deposition at a glancing incidence angle. This method allows for the fabrication of metallic nanowire arrays with periodicities down to 45 nm scaled up to wafer-size fabrication. As typical noble and magnetic metals, the Au and Fe nanowire arrays produced here exhibited large anisotropic optical and magnetic properties, respectively. The excitation of localized surface plasmon resonances (LSPRs) of the Au nanowire arrays resulted in a high electric field enhancement, which was used to detect phthalocyanine (CoPc) in surface-enhanced Raman scattering (SERS). Furthermore, the Fe nanowire arrays showed a very high in-plane magnetic anisotropy of approximately 412 mT, which may be the largest in-plane magnetic anisotropy field yet reported that is solely induced via shape anisotropy within the plane of a thin film.
| Original language | English |
|---|---|
| Pages (from-to) | 3519-3528 |
| Number of pages | 10 |
| Journal | Nano Research |
| Volume | 11 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Jul 2018 |
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Keywords
- anisotropic dielectric function
- magnetic anisotropy
- metallic nanowire array
- reverse epitaxy
- self-assembly
ASJC Scopus subject areas
- Materials Science(all)
- Electrical and Electronic Engineering
Cite this
Ultra-dense planar metallic nanowire arrays with extremely large anisotropic optical and magnetic properties. / Jia, Qi; Ou, Xin; Langer, Manuel; Schreiber, Benjamin; Grenzer, Jörg; Siles, Pablo F.; Rodriguez, Raul D.; Huang, Kai; Yuan, Ye; Heidarian, Alireza; Hübner, René; You, Tiangui; Yu, Wenjie; Lenz, Kilian; Lindner, Jürgen; Wang, Xi; Facsko, Stefan.
In: Nano Research, Vol. 11, No. 7, 01.07.2018, p. 3519-3528.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultra-dense planar metallic nanowire arrays with extremely large anisotropic optical and magnetic properties
AU - Jia, Qi
AU - Ou, Xin
AU - Langer, Manuel
AU - Schreiber, Benjamin
AU - Grenzer, Jörg
AU - Siles, Pablo F.
AU - Rodriguez, Raul D.
AU - Huang, Kai
AU - Yuan, Ye
AU - Heidarian, Alireza
AU - Hübner, René
AU - You, Tiangui
AU - Yu, Wenjie
AU - Lenz, Kilian
AU - Lindner, Jürgen
AU - Wang, Xi
AU - Facsko, Stefan
PY - 2018/7/1
Y1 - 2018/7/1
N2 - A nanofabrication method for the production of ultra-dense planar metallic nanowire arrays scalable to wafer-size is presented. The method is based on an efficient template deposition process to grow diverse metallic nanowire arrays with extreme regularity in only two steps. First, III–V semiconductor substrates are irradiated by a low-energy ion beam at an elevated temperature, forming a highly ordered nanogroove pattern by a “reverse epitaxy” process due to self-assembly of surface vacancies. Second, diverse metallic nanowire arrays (Au, Fe, Ni, Co, FeAl alloy) are fabricated on these III–V templates by deposition at a glancing incidence angle. This method allows for the fabrication of metallic nanowire arrays with periodicities down to 45 nm scaled up to wafer-size fabrication. As typical noble and magnetic metals, the Au and Fe nanowire arrays produced here exhibited large anisotropic optical and magnetic properties, respectively. The excitation of localized surface plasmon resonances (LSPRs) of the Au nanowire arrays resulted in a high electric field enhancement, which was used to detect phthalocyanine (CoPc) in surface-enhanced Raman scattering (SERS). Furthermore, the Fe nanowire arrays showed a very high in-plane magnetic anisotropy of approximately 412 mT, which may be the largest in-plane magnetic anisotropy field yet reported that is solely induced via shape anisotropy within the plane of a thin film.
AB - A nanofabrication method for the production of ultra-dense planar metallic nanowire arrays scalable to wafer-size is presented. The method is based on an efficient template deposition process to grow diverse metallic nanowire arrays with extreme regularity in only two steps. First, III–V semiconductor substrates are irradiated by a low-energy ion beam at an elevated temperature, forming a highly ordered nanogroove pattern by a “reverse epitaxy” process due to self-assembly of surface vacancies. Second, diverse metallic nanowire arrays (Au, Fe, Ni, Co, FeAl alloy) are fabricated on these III–V templates by deposition at a glancing incidence angle. This method allows for the fabrication of metallic nanowire arrays with periodicities down to 45 nm scaled up to wafer-size fabrication. As typical noble and magnetic metals, the Au and Fe nanowire arrays produced here exhibited large anisotropic optical and magnetic properties, respectively. The excitation of localized surface plasmon resonances (LSPRs) of the Au nanowire arrays resulted in a high electric field enhancement, which was used to detect phthalocyanine (CoPc) in surface-enhanced Raman scattering (SERS). Furthermore, the Fe nanowire arrays showed a very high in-plane magnetic anisotropy of approximately 412 mT, which may be the largest in-plane magnetic anisotropy field yet reported that is solely induced via shape anisotropy within the plane of a thin film.
KW - anisotropic dielectric function
KW - magnetic anisotropy
KW - metallic nanowire array
KW - reverse epitaxy
KW - self-assembly
UR - http://www.scopus.com/inward/record.url?scp=85028977341&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85028977341&partnerID=8YFLogxK
U2 - 10.1007/s12274-017-1793-y
DO - 10.1007/s12274-017-1793-y
M3 - Article
VL - 11
SP - 3519
EP - 3528
JO - Nano Research
JF - Nano Research
SN - 1998-0124
IS - 7
ER -