Turn-off losses estimation for charge injection controlled non-punch-through IGBTs

S. Lefebvre, F. Miserey

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The turn-off losses are estimated in the case of CIC NPT IGBTs operating on inductive load for snubberless turn-off operations. Only technological or electrical informations are needed, that are available from data sheets. In order to estimate the losses, IGBT's behaviour in the conduction state and in the voltage reapplication phase is described with the help of a one-dimensional analytical model. The stored charge removal is modelled in an elementary way to calculate the turn-off losses as a function of load current, of supply voltage and of case temperature. The calculated values of turn-off losses are compared with experimental results and also with results obtained in a bi-dimensional numerical simulation.

Original languageEnglish
Pages (from-to)563-569
Number of pages7
JournalMicroelectronics Journal
Volume30
Issue number6
DOIs
Publication statusPublished - 1 Jan 1999
Externally publishedYes

Fingerprint

Charge injection
Insulated gate bipolar transistors (IGBT)
injection
Electric potential
electric potential
Analytical models
conduction
Computer simulation
estimates
simulation
Temperature
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Turn-off losses estimation for charge injection controlled non-punch-through IGBTs. / Lefebvre, S.; Miserey, F.

In: Microelectronics Journal, Vol. 30, No. 6, 01.01.1999, p. 563-569.

Research output: Contribution to journalConference article

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