Turn-off analysis of the IGBT used in ZCS mode

S. Lefebvre, F. Forest, F. Calmon, J. P. Chante

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

This paper presents a study of the behaviour of PT and NPT IGBT in Zero Current Switching mode. Simulations allow to estimate the stored charge during turn-off cycle in this switching mode. We observe and we explain how to reduce turn-off losses by action on the gate drive, or by the choice of the device technology.

Original languageEnglish
Pages99-104
Number of pages6
Publication statusPublished - 1 Dec 1994
Externally publishedYes
EventProceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs - Davos, Switz
Duration: 31 May 19942 Jun 1994

Conference

ConferenceProceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs
CityDavos, Switz
Period31.5.942.6.94

ASJC Scopus subject areas

  • Engineering(all)

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