This paper presents a study of the behaviour of PT and NPT IGBT in Zero Current Switching mode. Simulations allow to estimate the stored charge during turn-off cycle in this switching mode. We observe and we explain how to reduce turn-off losses by action on the gate drive, or by the choice of the device technology.
|Number of pages||6|
|Publication status||Published - 1 Dec 1994|
|Event||Proceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs - Davos, Switz|
Duration: 31 May 1994 → 2 Jun 1994
|Conference||Proceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs|
|Period||31.5.94 → 2.6.94|
ASJC Scopus subject areas