Turn-off analysis of PT and NPT IGBTs in zero-current switching

S. Lefebvre, F. Forest, F. Costa, J. Arnould

Research output: Contribution to journalArticle

Abstract

The lower turn-off losses in zerocurrent switching (ZCS) converters as compared to the conventional hard switching mode using insulated gate bipolar transistors (IGBT), depends on the intrinsic bipolar junction transistor structure. Whichever the IGBT type may be, a significant part of the stored charge is removed from the base of the intrinsic bipolar junction transistor in ZCS because of the spontaneous current decrease, and because of the antiparallel diode turn-on. The turn-off loss reduction is especially significant when the carrier lifetime is low.

Original languageEnglish
Pages (from-to)185-191
Number of pages7
JournalIEE Proceedings: Circuits, Devices and Systems
Volume145
Issue number3
DOIs
Publication statusPublished - 1 Jan 1998
Externally publishedYes

Fingerprint

Insulated gate bipolar transistors (IGBT)
Bipolar transistors
Carrier lifetime
Diodes
Zero current switching

Keywords

  • Non-punch-throiigh IGBT
  • Punch-through 1GBT
  • Zero-current snitching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Turn-off analysis of PT and NPT IGBTs in zero-current switching. / Lefebvre, S.; Forest, F.; Costa, F.; Arnould, J.

In: IEE Proceedings: Circuits, Devices and Systems, Vol. 145, No. 3, 01.01.1998, p. 185-191.

Research output: Contribution to journalArticle

Lefebvre, S. ; Forest, F. ; Costa, F. ; Arnould, J. / Turn-off analysis of PT and NPT IGBTs in zero-current switching. In: IEE Proceedings: Circuits, Devices and Systems. 1998 ; Vol. 145, No. 3. pp. 185-191.
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