Abstract
The peculiarities of W ion implantation by means of pulsed-frequency mode when duration of arc current pulse was less that of high voltage pulse. By OES and SIMS methods the concentration depth distribution of implanted W have been determined when irradiation fluence and location of specimens related section of the ion beam were varied. It is shown that pulsed-frequency ion implantation with modified scheme of ion current pulse formation ensures the effective alloying more deep layers of steel with W. Near the edges of the ion beam the implantation effectiveness is decreased due to decreasing the current density and energy of ions on the periphery of the beam.
| Original language | English |
|---|---|
| Pages (from-to) | 21-25 |
| Number of pages | 5 |
| Journal | Fizika i Khimiya Obrabotki Materialov |
| Issue number | 3 |
| Publication status | Published - May 1998 |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
Puchkareva, L. N., Chesnokov, S. M., & Shulepov, I. A. (1998). Tungsten ions implantation under pulse-frequency operation condition. Fizika i Khimiya Obrabotki Materialov, (3), 21-25.