Abstract
A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.
| Original language | English |
|---|---|
| Pages (from-to) | 1845-1852 |
| Number of pages | 8 |
| Journal | Advanced Materials |
| Volume | 28 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2 Mar 2016 |
| Externally published | Yes |
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Keywords
- GaSe
- graphene
- heterojunctions
- Schottky
- two-dimensional materials
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
Cite this
Tunable Graphene-GaSe Dual Heterojunction Device. / Kim, Wonjae; Li, Changfeng; Chaves, Ferney A.; Jiménez, David; Rodriguez, Raul D.; Susoma, Jannatul; Fenner, Matthias A.; Lipsanen, Harri; Riikonen, Juha.
In: Advanced Materials, Vol. 28, No. 9, 02.03.2016, p. 1845-1852.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Tunable Graphene-GaSe Dual Heterojunction Device
AU - Kim, Wonjae
AU - Li, Changfeng
AU - Chaves, Ferney A.
AU - Jiménez, David
AU - Rodriguez, Raul D.
AU - Susoma, Jannatul
AU - Fenner, Matthias A.
AU - Lipsanen, Harri
AU - Riikonen, Juha
PY - 2016/3/2
Y1 - 2016/3/2
N2 - A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.
AB - A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.
KW - GaSe
KW - graphene
KW - heterojunctions
KW - Schottky
KW - two-dimensional materials
UR - http://www.scopus.com/inward/record.url?scp=84959457315&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959457315&partnerID=8YFLogxK
U2 - 10.1002/adma.201504514
DO - 10.1002/adma.201504514
M3 - Article
AN - SCOPUS:84959457315
VL - 28
SP - 1845
EP - 1852
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 9
ER -