Tunable Graphene-GaSe Dual Heterojunction Device

Wonjae Kim, Changfeng Li, Ferney A. Chaves, David Jiménez, Raul D. Rodriguez, Jannatul Susoma, Matthias A. Fenner, Harri Lipsanen, Juha Riikonen

Research output: Contribution to journal › Article

52 Citations (Scopus)

Abstract

A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.

Original language	English
Pages (from-to)	1845-1852
Number of pages	8
Journal	Advanced Materials
Volume	28
Issue number	9
DOIs	https://doi.org/10.1002/adma.201504514
Publication status	Published - 2 Mar 2016
Externally published	Yes

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Keywords

GaSe
graphene
heterojunctions
Schottky
two-dimensional materials

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

Kim, W., Li, C., Chaves, F. A., Jiménez, D., Rodriguez, R. D., Susoma, J., ... Riikonen, J. (2016). Tunable Graphene-GaSe Dual Heterojunction Device. Advanced Materials, 28(9), 1845-1852. https://doi.org/10.1002/adma.201504514

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AU - Li, Changfeng

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AU - Jiménez, David

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AU - Susoma, Jannatul

AU - Fenner, Matthias A.

AU - Lipsanen, Harri

AU - Riikonen, Juha

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Access to Document

10.1002/adma.201504514