Tunable Graphene-GaSe Dual Heterojunction Device

Wonjae Kim, Changfeng Li, Ferney A. Chaves, David Jiménez, Raul D. Rodriguez, Jannatul Susoma, Matthias A. Fenner, Harri Lipsanen, Juha Riikonen

Research output: Contribution to journal › Article

55 Citations (Scopus)

Abstract

A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.

Original languageEnglish
Pages (from-to)1845-1852
Number of pages8
JournalAdvanced Materials
Volume28
Issue number9
DOIs
Publication statusPublished - 2 Mar 2016
Externally publishedYes

Keywords

  • GaSe
  • graphene
  • heterojunctions
  • Schottky
  • two-dimensional materials

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    • Cite this

    Kim, W., Li, C., Chaves, F. A., Jiménez, D., Rodriguez, R. D., Susoma, J., Fenner, M. A., Lipsanen, H., & Riikonen, J. (2016). Tunable Graphene-GaSe Dual Heterojunction Device. Advanced Materials, 28(9), 1845-1852. https://doi.org/10.1002/adma.201504514