Tunable Graphene-GaSe Dual Heterojunction Device

Wonjae Kim, Changfeng Li, Ferney A. Chaves, David Jiménez, Raul D. Rodriguez, Jannatul Susoma, Matthias A. Fenner, Harri Lipsanen, Juha Riikonen

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.

Original language	English
Pages (from-to)	1845-1852
Number of pages	8
Journal	Advanced Materials
Volume	28
Issue number	9
DOIs	https://doi.org/10.1002/adma.201504514
Publication status	Published - 2 Mar 2016
Externally published	Yes

Keywords

GaSe
graphene
heterojunctions
Schottky
two-dimensional materials

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201504514

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Cite this

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abstract = "A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.",

keywords = "GaSe, graphene, heterojunctions, Schottky, two-dimensional materials",

author = "Wonjae Kim and Changfeng Li and Chaves, {Ferney A.} and David Jim{\'e}nez and Rodriguez, {Raul D.} and Jannatul Susoma and Fenner, {Matthias A.} and Harri Lipsanen and Juha Riikonen",

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T1 - Tunable Graphene-GaSe Dual Heterojunction Device

AU - Kim, Wonjae

AU - Li, Changfeng

AU - Chaves, Ferney A.

AU - Jiménez, David

AU - Rodriguez, Raul D.

AU - Susoma, Jannatul

AU - Fenner, Matthias A.

AU - Lipsanen, Harri

AU - Riikonen, Juha

PY - 2016/3/2

Y1 - 2016/3/2

N2 - A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.

AB - A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.

KW - GaSe

KW - graphene

KW - heterojunctions

KW - Schottky

KW - two-dimensional materials

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