TY - JOUR
T1 - Tunability of CuOx properties by gas flow rate control in the reactive DC magnetron sputtering
AU - Vitelaru, C.
AU - Pana, I.
AU - Kiss, A. E.
AU - Zoita, N. C.
AU - Vladescu, A.
AU - Braic, M.
N1 - Funding Information:
This work was funded by the Romanian Ministry of Research and Innovation, through projects PN 18N/2019 and PROINSTITUTIO Project – contract no. 19PFE/17.10.2018. The XRD measurements were carried out by using the equipment acquired by the infrastructure project INOVA-OPTIMA SMIS code 49164, contract no. 658/2014.
Publisher Copyright:
© 2019 National Institute of Optoelectronics. All rights reserved.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2019
Y1 - 2019
N2 - The reactive magnetron sputtering process of Cu target in Ar/O2 atmosphere is described in a wide interval of reactive gas flow rate fractions, ranging from 0 to 70 %. The experiments took place in the constant pressure mode, at 0.67 Pa constant pressure. The gas flow ratios were calculated to take into account the differences in the pumping speeds for different gases. This approach makes possible the distinct evaluation of the oxygen gas losses due to the reactive processes inside the plasma chamber. The pressure and voltage variations, along with optical emission intensity variations of the selected lines during the hysteresis experiments are used to describe and identify the process windows. Considering a selected number of critical points on the process window, thin films of CuOx were deposited and characterized. The transition from Cu2O to CuO structure was assessed by XRD analysis, and confirmed by the optical properties of the films. The films with higher Cu content were identified as Cu2O, with direct optical band gap values in the range of 2.53 to 2.41 eV, whereas lower Cu content films were identified as CuO with indirect band gap values in the range of 1.13 to 1.09 eV. Moreover, a reliable concordance between the variations of process parameters and thin film properties was obtained.
AB - The reactive magnetron sputtering process of Cu target in Ar/O2 atmosphere is described in a wide interval of reactive gas flow rate fractions, ranging from 0 to 70 %. The experiments took place in the constant pressure mode, at 0.67 Pa constant pressure. The gas flow ratios were calculated to take into account the differences in the pumping speeds for different gases. This approach makes possible the distinct evaluation of the oxygen gas losses due to the reactive processes inside the plasma chamber. The pressure and voltage variations, along with optical emission intensity variations of the selected lines during the hysteresis experiments are used to describe and identify the process windows. Considering a selected number of critical points on the process window, thin films of CuOx were deposited and characterized. The transition from Cu2O to CuO structure was assessed by XRD analysis, and confirmed by the optical properties of the films. The films with higher Cu content were identified as Cu2O, with direct optical band gap values in the range of 2.53 to 2.41 eV, whereas lower Cu content films were identified as CuO with indirect band gap values in the range of 1.13 to 1.09 eV. Moreover, a reliable concordance between the variations of process parameters and thin film properties was obtained.
KW - Copper oxide
KW - Optical emission spectroscopy
KW - Reactive magnetron sputtering
UR - http://www.scopus.com/inward/record.url?scp=85081395756&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85081395756&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:85081395756
VL - 21
SP - 717
EP - 725
JO - Journal of Optoelectronics and Advanced Materials
JF - Journal of Optoelectronics and Advanced Materials
SN - 1454-4164
IS - 11-12
ER -