Treeing resistance parameters of polymeric dielectrics

Research Center for Technologies in Space Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Treeing resistance parameters for polystyrene, polymethyl methacrylate, and polycarbonate are presented in this paper. It has been shown that for polymers with residual mechanical strain the greatest treeing resistance is observed for samples with higher tensile yield strength. To decrease the treeing growth rate or increase the breakdown time of polymeric dielectrics, the thermal diffusivity of base polymers should be reduced.

Original language	English
Title of host publication	Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012
DOIs	https://doi.org/10.1109/IFOST.2012.6357759
Publication status	Published - 2012
Event	2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Russian Federation Duration: 18 Sep 2012 → 21 Sep 2012

Other

Other	2012 7th International Forum on Strategic Technology, IFOST 2012
Country	Russian Federation
City	Tomsk
Period	18.9.12 → 21.9.12

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Keywords

breakdown time
polymeric dielectrics
residual strain
thermal diffusivity
Treeing resistance

ASJC Scopus subject areas

Management of Technology and Innovation

Cite this

Gefle, O. S., & Lebedev, S. M. (2012). Treeing resistance parameters of polymeric dielectrics. In Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012 [6357759] https://doi.org/10.1109/IFOST.2012.6357759

@inproceedings{6d5e67b902544a3b9f9df8ffe572ad65,

title = "Treeing resistance parameters of polymeric dielectrics",

abstract = "Treeing resistance parameters for polystyrene, polymethyl methacrylate, and polycarbonate are presented in this paper. It has been shown that for polymers with residual mechanical strain the greatest treeing resistance is observed for samples with higher tensile yield strength. To decrease the treeing growth rate or increase the breakdown time of polymeric dielectrics, the thermal diffusivity of base polymers should be reduced.",

keywords = "breakdown time, polymeric dielectrics, residual strain, thermal diffusivity, Treeing resistance",

author = "Gefle, {O. S.} and Lebedev, {S. M.}",

year = "2012",

doi = "10.1109/IFOST.2012.6357759",

language = "English",

isbn = "9781467317702",

booktitle = "Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012",

note = "2012 7th International Forum on Strategic Technology, IFOST 2012 ; Conference date: 18-09-2012 Through 21-09-2012",

}

TY - GEN

T1 - Treeing resistance parameters of polymeric dielectrics

AU - Gefle, O. S.

AU - Lebedev, S. M.

PY - 2012

Y1 - 2012

N2 - Treeing resistance parameters for polystyrene, polymethyl methacrylate, and polycarbonate are presented in this paper. It has been shown that for polymers with residual mechanical strain the greatest treeing resistance is observed for samples with higher tensile yield strength. To decrease the treeing growth rate or increase the breakdown time of polymeric dielectrics, the thermal diffusivity of base polymers should be reduced.

AB - Treeing resistance parameters for polystyrene, polymethyl methacrylate, and polycarbonate are presented in this paper. It has been shown that for polymers with residual mechanical strain the greatest treeing resistance is observed for samples with higher tensile yield strength. To decrease the treeing growth rate or increase the breakdown time of polymeric dielectrics, the thermal diffusivity of base polymers should be reduced.

KW - breakdown time

KW - polymeric dielectrics

KW - residual strain

KW - thermal diffusivity

KW - Treeing resistance

UR - http://www.scopus.com/inward/record.url?scp=84871846934&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871846934&partnerID=8YFLogxK

U2 - 10.1109/IFOST.2012.6357759

DO - 10.1109/IFOST.2012.6357759

M3 - Conference contribution

AN - SCOPUS:84871846934

SN - 9781467317702

BT - Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012

T2 - 2012 7th International Forum on Strategic Technology, IFOST 2012

Y2 - 18 September 2012 through 21 September 2012

ER -

Access to Document

10.1109/IFOST.2012.6357759