Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Research output: Contribution to journalArticle

Abstract

Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.

Original languageEnglish
Article number012003
JournalJournal of Physics: Conference Series
Volume552
Issue number1
DOIs
Publication statusPublished - 2014

Fingerprint

photoconductivity
ablation
gallium
charge carriers
silicon
ions
ion beams
vacuum
annealing
causes
kinetics
thin films
pulses

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{ef0d13f89ac9442e86b3054bbf741cf9,
title = "Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation",
abstract = "Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.",
author = "Kabyshev, {A. V.} and Konusov, {F. V.} and Remnev, {G. E.} and Pavlov, {Sergey Khonstantinovich}",
year = "2014",
doi = "10.1088/1742-6596/552/1/012003",
language = "English",
volume = "552",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

AU - Kabyshev, A. V.

AU - Konusov, F. V.

AU - Remnev, G. E.

AU - Pavlov, Sergey Khonstantinovich

PY - 2014

Y1 - 2014

N2 - Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.

AB - Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.

UR - http://www.scopus.com/inward/record.url?scp=84911412306&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84911412306&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/552/1/012003

DO - 10.1088/1742-6596/552/1/012003

M3 - Article

VL - 552

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012003

ER -