Abstract
Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.
| Original language | English |
|---|---|
| Article number | 012003 |
| Journal | Journal of Physics: Conference Series |
| Volume | 552 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2014 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation. / Kabyshev, A. V.; Konusov, F. V.; Remnev, G. E.; Pavlov, Sergey Khonstantinovich.
In: Journal of Physics: Conference Series, Vol. 552, No. 1, 012003, 2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation
AU - Kabyshev, A. V.
AU - Konusov, F. V.
AU - Remnev, G. E.
AU - Pavlov, Sergey Khonstantinovich
PY - 2014
Y1 - 2014
N2 - Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.
AB - Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.
UR - http://www.scopus.com/inward/record.url?scp=84911412306&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84911412306&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/552/1/012003
DO - 10.1088/1742-6596/552/1/012003
M3 - Article
AN - SCOPUS:84911412306
VL - 552
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012003
ER -