Transition in AlGalnP heterostructures with multiple quantum wells during fast neutron radiation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Radiation exposure causes degradation of semiconductors' structures as well as different semiconductors based on these structures. The purpose of the research work is to study transitions in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation. Objects of the research are 590 nm and 630 nm LEDs based on AlGaInP heterostructures. It is proved that LEDs' radiant power decrease occurs within three periods: during the first period radiant power decrease is caused by radiation stimulated structural adjustment of a primary defect structure; during the second period the decrease is results from radiative defects introduction; with further enhancement of radiation exposure the second period develops into the third period, where LEDs evolves into the mode of electrons low injection into an active region. Empirical relations explain radiant power changes within each period are presented. Region of transitions between the first and the second periods that cause radiant power partial recovery are specified. Transitions occur both directly and indirectly for heterostructures. Potential causes of transitions occurrence are being discussed.

Original languageEnglish
Title of host publicationIOP Conference Series: Materials Science and Engineering
PublisherInstitute of Physics Publishing
Volume81
Edition1
DOIs
Publication statusPublished - 23 Apr 2015
EventInternational Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014 - Tomsk, Russian Federation
Duration: 3 Nov 20148 Nov 2014

Other

OtherInternational Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014
CountryRussian Federation
CityTomsk
Period3.11.148.11.14

Fingerprint

Semiconductor quantum wells
Heterojunctions
Neutrons
Light emitting diodes
Radiation
Semiconductor materials
Defect structures
Recovery
Degradation
Defects
Electrons

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Gradoboev, A. V., & Orlova, K. N. (2015). Transition in AlGalnP heterostructures with multiple quantum wells during fast neutron radiation. In IOP Conference Series: Materials Science and Engineering (1 ed., Vol. 81). [012008] Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/81/1/012008

Transition in AlGalnP heterostructures with multiple quantum wells during fast neutron radiation. / Gradoboev, A. V.; Orlova, K. N.

IOP Conference Series: Materials Science and Engineering. Vol. 81 1. ed. Institute of Physics Publishing, 2015. 012008.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gradoboev, AV & Orlova, KN 2015, Transition in AlGalnP heterostructures with multiple quantum wells during fast neutron radiation. in IOP Conference Series: Materials Science and Engineering. 1 edn, vol. 81, 012008, Institute of Physics Publishing, International Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014, Tomsk, Russian Federation, 3.11.14. https://doi.org/10.1088/1757-899X/81/1/012008
Gradoboev AV, Orlova KN. Transition in AlGalnP heterostructures with multiple quantum wells during fast neutron radiation. In IOP Conference Series: Materials Science and Engineering. 1 ed. Vol. 81. Institute of Physics Publishing. 2015. 012008 https://doi.org/10.1088/1757-899X/81/1/012008
Gradoboev, A. V. ; Orlova, K. N. / Transition in AlGalnP heterostructures with multiple quantum wells during fast neutron radiation. IOP Conference Series: Materials Science and Engineering. Vol. 81 1. ed. Institute of Physics Publishing, 2015.
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