Abstract
Radiation exposure causes degradation of semiconductors' structures as well as different semiconductors based on these structures. The purpose of the research work is to study transitions in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation. Objects of the research are 590 nm and 630 nm LEDs based on AlGaInP heterostructures. It is proved that LEDs' radiant power decrease occurs within three periods: during the first period radiant power decrease is caused by radiation stimulated structural adjustment of a primary defect structure; during the second period the decrease is results from radiative defects introduction; with further enhancement of radiation exposure the second period develops into the third period, where LEDs evolves into the mode of electrons low injection into an active region. Empirical relations explain radiant power changes within each period are presented. Region of transitions between the first and the second periods that cause radiant power partial recovery are specified. Transitions occur both directly and indirectly for heterostructures. Potential causes of transitions occurrence are being discussed.
| Original language | English |
|---|---|
| Title of host publication | IOP Conference Series: Materials Science and Engineering |
| Publisher | Institute of Physics Publishing |
| Volume | 81 |
| Edition | 1 |
| DOIs | |
| Publication status | Published - 23 Apr 2015 |
| Event | International Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014 - Tomsk, Russian Federation Duration: 3 Nov 2014 → 8 Nov 2014 |
Other
| Other | International Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 3.11.14 → 8.11.14 |
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ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)
Cite this
Transition in AlGalnP heterostructures with multiple quantum wells during fast neutron radiation. / Gradoboev, A. V.; Orlova, K. N.
IOP Conference Series: Materials Science and Engineering. Vol. 81 1. ed. Institute of Physics Publishing, 2015. 012008.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Transition in AlGalnP heterostructures with multiple quantum wells during fast neutron radiation
AU - Gradoboev, A. V.
AU - Orlova, K. N.
PY - 2015/4/23
Y1 - 2015/4/23
N2 - Radiation exposure causes degradation of semiconductors' structures as well as different semiconductors based on these structures. The purpose of the research work is to study transitions in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation. Objects of the research are 590 nm and 630 nm LEDs based on AlGaInP heterostructures. It is proved that LEDs' radiant power decrease occurs within three periods: during the first period radiant power decrease is caused by radiation stimulated structural adjustment of a primary defect structure; during the second period the decrease is results from radiative defects introduction; with further enhancement of radiation exposure the second period develops into the third period, where LEDs evolves into the mode of electrons low injection into an active region. Empirical relations explain radiant power changes within each period are presented. Region of transitions between the first and the second periods that cause radiant power partial recovery are specified. Transitions occur both directly and indirectly for heterostructures. Potential causes of transitions occurrence are being discussed.
AB - Radiation exposure causes degradation of semiconductors' structures as well as different semiconductors based on these structures. The purpose of the research work is to study transitions in AlGaInP heterostructures with multiple quantum wells during fast neutron radiation. Objects of the research are 590 nm and 630 nm LEDs based on AlGaInP heterostructures. It is proved that LEDs' radiant power decrease occurs within three periods: during the first period radiant power decrease is caused by radiation stimulated structural adjustment of a primary defect structure; during the second period the decrease is results from radiative defects introduction; with further enhancement of radiation exposure the second period develops into the third period, where LEDs evolves into the mode of electrons low injection into an active region. Empirical relations explain radiant power changes within each period are presented. Region of transitions between the first and the second periods that cause radiant power partial recovery are specified. Transitions occur both directly and indirectly for heterostructures. Potential causes of transitions occurrence are being discussed.
UR - http://www.scopus.com/inward/record.url?scp=84930466136&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84930466136&partnerID=8YFLogxK
U2 - 10.1088/1757-899X/81/1/012008
DO - 10.1088/1757-899X/81/1/012008
M3 - Conference contribution
VL - 81
BT - IOP Conference Series: Materials Science and Engineering
PB - Institute of Physics Publishing
ER -