Total yield of channeling radiation from relativistic electrons in thin Si and W crystals

Sergey Vladimirovich Abdrashitov, O. V. Bogdanov, S. B. Dabagov, Y. L. Pivovarov, T. A. Tukhfatullin

Research output: Contribution to journal › Article

Abstract

Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.

Original language	English
Pages (from-to)	59-62
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	309
DOIs	https://doi.org/10.1016/j.nimb.2013.02.020
Publication status	Published - 1 Jan 2013

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Keywords

Axial channeling
Channeling radiation
Planar channeling

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Cite this

Abdrashitov, S. V., Bogdanov, O. V., Dabagov, S. B., Pivovarov, Y. L., & Tukhfatullin, T. A. (2013). Total yield of channeling radiation from relativistic electrons in thin Si and W crystals. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 309, 59-62. https://doi.org/10.1016/j.nimb.2013.02.020

Total yield of channeling radiation from relativistic electrons in thin Si and W crystals. / Abdrashitov, Sergey Vladimirovich ; Bogdanov, O. V.; Dabagov, S. B.; Pivovarov, Y. L.; Tukhfatullin, T. A.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 309, 01.01.2013, p. 59-62.

Research output: Contribution to journal › Article

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AU - Pivovarov, Y. L.

AU - Tukhfatullin, T. A.

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Access to Document

10.1016/j.nimb.2013.02.020