Total yield of channeling radiation from relativistic electrons in thin Si and W crystals

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6 Citations (Scopus)

Abstract

Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.

Original languageEnglish
Pages (from-to)59-62
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume309
DOIs
Publication statusPublished - 1 Jan 2013

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Radiation
Crystals
Electrons
radiation
Crystal orientation
crystals
Tungsten
Electron beams
divergence
tungsten
electrons
computerized simulation
alignment
electron beams
computer programs
Silicon
Computer simulation
silicon
Experiments

Keywords

  • Axial channeling
  • Channeling radiation
  • Planar channeling

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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title = "Total yield of channeling radiation from relativistic electrons in thin Si and W crystals",
abstract = "Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.",
keywords = "Axial channeling, Channeling radiation, Planar channeling",
author = "Abdrashitov, {Sergey Vladimirovich} and Bogdanov, {O. V.} and Dabagov, {S. B.} and Pivovarov, {Y. L.} and Tukhfatullin, {T. A.}",
year = "2013",
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language = "English",
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pages = "59--62",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
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TY - JOUR

T1 - Total yield of channeling radiation from relativistic electrons in thin Si and W crystals

AU - Abdrashitov, Sergey Vladimirovich

AU - Bogdanov, O. V.

AU - Dabagov, S. B.

AU - Pivovarov, Y. L.

AU - Tukhfatullin, T. A.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.

AB - Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.

KW - Axial channeling

KW - Channeling radiation

KW - Planar channeling

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U2 - 10.1016/j.nimb.2013.02.020

DO - 10.1016/j.nimb.2013.02.020

M3 - Article

VL - 309

SP - 59

EP - 62

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -