Abstract
Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.
| Original language | English |
|---|---|
| Pages (from-to) | 59-62 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 309 |
| DOIs | |
| Publication status | Published - 1 Jan 2013 |
Fingerprint
Keywords
- Axial channeling
- Channeling radiation
- Planar channeling
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
Cite this
Total yield of channeling radiation from relativistic electrons in thin Si and W crystals. / Abdrashitov, Sergey Vladimirovich; Bogdanov, O. V.; Dabagov, S. B.; Pivovarov, Y. L.; Tukhfatullin, T. A.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 309, 01.01.2013, p. 59-62.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Total yield of channeling radiation from relativistic electrons in thin Si and W crystals
AU - Abdrashitov, Sergey Vladimirovich
AU - Bogdanov, O. V.
AU - Dabagov, S. B.
AU - Pivovarov, Y. L.
AU - Tukhfatullin, T. A.
PY - 2013/1/1
Y1 - 2013/1/1
N2 - Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.
AB - Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.
KW - Axial channeling
KW - Channeling radiation
KW - Planar channeling
UR - http://www.scopus.com/inward/record.url?scp=84885185412&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885185412&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2013.02.020
DO - 10.1016/j.nimb.2013.02.020
M3 - Article
AN - SCOPUS:84885185412
VL - 309
SP - 59
EP - 62
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -