Ti-Si-N films with a high content of Si

Jindrich Musil, Petr Zeman, Pavel Dohnal

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The article reports on mechanical properties and oxidation of amorphous Ti-Si-N films with a high (>20 at.-%) content of Si reactively sputtered using a closed magnetic field dual magnetron sputtering system operating in AC pulse mode. The films were sputtered from compound targets on Si(100), 15 330 steel and Al2O3 substrates. It was found that (1) the Ti-Si-N films with a high (≥50 at.-%) content of N are X-ray amorphous and exhibit (i) relatively high hardness H ranging from ∼20 to 27 GPa and (ii) high oxidation temperature achieving ∼1480 °C for the a-Ti-Si-N film on the Al2O3 (sapphire) substrate, and (2) Young's modulus of the films is strongly affected by mechanical properties of the substrate.

Original languageEnglish
JournalPlasma Processes and Polymers
Volume4
Issue numberSUPPL.1
DOIs
Publication statusPublished - 1 Dec 2007

Fingerprint

Substrates
mechanical properties
Mechanical properties
oxidation
Thermooxidation
Aluminum Oxide
Steel
Sapphire
Magnetron sputtering
modulus of elasticity
alternating current
magnetron sputtering
sapphire
hardness
Elastic moduli
Hardness
steels
Magnetic fields
X rays
Oxidation

Keywords

  • DC discharges
  • Films
  • Oxidation
  • Si content
  • Structure
  • Ti-Si-N film

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Polymers and Plastics

Cite this

Ti-Si-N films with a high content of Si. / Musil, Jindrich; Zeman, Petr; Dohnal, Pavel.

In: Plasma Processes and Polymers, Vol. 4, No. SUPPL.1, 01.12.2007.

Research output: Contribution to journalArticle

Musil, Jindrich ; Zeman, Petr ; Dohnal, Pavel. / Ti-Si-N films with a high content of Si. In: Plasma Processes and Polymers. 2007 ; Vol. 4, No. SUPPL.1.
@article{d383f00ccc1d4d7b9065b86804261b6e,
title = "Ti-Si-N films with a high content of Si",
abstract = "The article reports on mechanical properties and oxidation of amorphous Ti-Si-N films with a high (>20 at.-{\%}) content of Si reactively sputtered using a closed magnetic field dual magnetron sputtering system operating in AC pulse mode. The films were sputtered from compound targets on Si(100), 15 330 steel and Al2O3 substrates. It was found that (1) the Ti-Si-N films with a high (≥50 at.-{\%}) content of N are X-ray amorphous and exhibit (i) relatively high hardness H ranging from ∼20 to 27 GPa and (ii) high oxidation temperature achieving ∼1480 °C for the a-Ti-Si-N film on the Al2O3 (sapphire) substrate, and (2) Young's modulus of the films is strongly affected by mechanical properties of the substrate.",
keywords = "DC discharges, Films, Oxidation, Si content, Structure, Ti-Si-N film",
author = "Jindrich Musil and Petr Zeman and Pavel Dohnal",
year = "2007",
month = "12",
day = "1",
doi = "10.1002/ppap.200731408",
language = "English",
volume = "4",
journal = "Plasma Processes and Polymers",
issn = "1612-8850",
publisher = "Wiley-VCH Verlag",
number = "SUPPL.1",

}

TY - JOUR

T1 - Ti-Si-N films with a high content of Si

AU - Musil, Jindrich

AU - Zeman, Petr

AU - Dohnal, Pavel

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The article reports on mechanical properties and oxidation of amorphous Ti-Si-N films with a high (>20 at.-%) content of Si reactively sputtered using a closed magnetic field dual magnetron sputtering system operating in AC pulse mode. The films were sputtered from compound targets on Si(100), 15 330 steel and Al2O3 substrates. It was found that (1) the Ti-Si-N films with a high (≥50 at.-%) content of N are X-ray amorphous and exhibit (i) relatively high hardness H ranging from ∼20 to 27 GPa and (ii) high oxidation temperature achieving ∼1480 °C for the a-Ti-Si-N film on the Al2O3 (sapphire) substrate, and (2) Young's modulus of the films is strongly affected by mechanical properties of the substrate.

AB - The article reports on mechanical properties and oxidation of amorphous Ti-Si-N films with a high (>20 at.-%) content of Si reactively sputtered using a closed magnetic field dual magnetron sputtering system operating in AC pulse mode. The films were sputtered from compound targets on Si(100), 15 330 steel and Al2O3 substrates. It was found that (1) the Ti-Si-N films with a high (≥50 at.-%) content of N are X-ray amorphous and exhibit (i) relatively high hardness H ranging from ∼20 to 27 GPa and (ii) high oxidation temperature achieving ∼1480 °C for the a-Ti-Si-N film on the Al2O3 (sapphire) substrate, and (2) Young's modulus of the films is strongly affected by mechanical properties of the substrate.

KW - DC discharges

KW - Films

KW - Oxidation

KW - Si content

KW - Structure

KW - Ti-Si-N film

UR - http://www.scopus.com/inward/record.url?scp=40949159528&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40949159528&partnerID=8YFLogxK

U2 - 10.1002/ppap.200731408

DO - 10.1002/ppap.200731408

M3 - Article

AN - SCOPUS:40949159528

VL - 4

JO - Plasma Processes and Polymers

JF - Plasma Processes and Polymers

SN - 1612-8850

IS - SUPPL.1

ER -