Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Oriol Aviñó Salvadó, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An antiparallel PiN diode is present in the structure of the SiC Power MOSFET. For simplicity, increased module current ratings, and cost reasons, it sometimes may be preferable to use this diode rather than to add an external Schottky diode to the MOSFET. However, SiC PiN diodes are sensitive to defects in the SiC crystal, and their performance can degrade rapidly. In this paper, we assess the effect of several stresses on the characteristics of a SiC MOSFET, focusing on the stresses which involve the body diode. We demonstrate that using the body diode does not degrade its performances. However, it may produce a noticeable shift in the threshold voltage of the MOSFET. While this behaviour is observed for MOSFETs from one manufacturer, it is not exhibited for others, which indicates that it may be a consequence of some particular design or manufacturing parameters.

Original languageEnglish
Pages (from-to)636-640
Number of pages5
JournalMicroelectronics Reliability
Volume88-90
DOIs
Publication statusPublished - 1 Sep 2018
Externally publishedYes

Fingerprint

Threshold voltage
threshold voltage
Diodes
field effect transistors
diodes
conduction
ratings
Schottky diodes
manufacturing
modules
costs
shift
defects
Defects
Crystals
crystals
Costs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. / Aviñó Salvadó, Oriol; Morel, Hervé; Buttay, Cyril; Labrousse, Denis; Lefebvre, Stéphane.

In: Microelectronics Reliability, Vol. 88-90, 01.09.2018, p. 636-640.

Research output: Contribution to journalArticle

Aviñó Salvadó, Oriol ; Morel, Hervé ; Buttay, Cyril ; Labrousse, Denis ; Lefebvre, Stéphane. / Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. In: Microelectronics Reliability. 2018 ; Vol. 88-90. pp. 636-640.
@article{68eb44e1364142b488188d8355f397d3,
title = "Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode",
abstract = "An antiparallel PiN diode is present in the structure of the SiC Power MOSFET. For simplicity, increased module current ratings, and cost reasons, it sometimes may be preferable to use this diode rather than to add an external Schottky diode to the MOSFET. However, SiC PiN diodes are sensitive to defects in the SiC crystal, and their performance can degrade rapidly. In this paper, we assess the effect of several stresses on the characteristics of a SiC MOSFET, focusing on the stresses which involve the body diode. We demonstrate that using the body diode does not degrade its performances. However, it may produce a noticeable shift in the threshold voltage of the MOSFET. While this behaviour is observed for MOSFETs from one manufacturer, it is not exhibited for others, which indicates that it may be a consequence of some particular design or manufacturing parameters.",
author = "{Avi{\~n}{\'o} Salvad{\'o}}, Oriol and Herv{\'e} Morel and Cyril Buttay and Denis Labrousse and St{\'e}phane Lefebvre",
year = "2018",
month = "9",
day = "1",
doi = "10.1016/j.microrel.2018.06.033",
language = "English",
volume = "88-90",
pages = "636--640",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

AU - Aviñó Salvadó, Oriol

AU - Morel, Hervé

AU - Buttay, Cyril

AU - Labrousse, Denis

AU - Lefebvre, Stéphane

PY - 2018/9/1

Y1 - 2018/9/1

N2 - An antiparallel PiN diode is present in the structure of the SiC Power MOSFET. For simplicity, increased module current ratings, and cost reasons, it sometimes may be preferable to use this diode rather than to add an external Schottky diode to the MOSFET. However, SiC PiN diodes are sensitive to defects in the SiC crystal, and their performance can degrade rapidly. In this paper, we assess the effect of several stresses on the characteristics of a SiC MOSFET, focusing on the stresses which involve the body diode. We demonstrate that using the body diode does not degrade its performances. However, it may produce a noticeable shift in the threshold voltage of the MOSFET. While this behaviour is observed for MOSFETs from one manufacturer, it is not exhibited for others, which indicates that it may be a consequence of some particular design or manufacturing parameters.

AB - An antiparallel PiN diode is present in the structure of the SiC Power MOSFET. For simplicity, increased module current ratings, and cost reasons, it sometimes may be preferable to use this diode rather than to add an external Schottky diode to the MOSFET. However, SiC PiN diodes are sensitive to defects in the SiC crystal, and their performance can degrade rapidly. In this paper, we assess the effect of several stresses on the characteristics of a SiC MOSFET, focusing on the stresses which involve the body diode. We demonstrate that using the body diode does not degrade its performances. However, it may produce a noticeable shift in the threshold voltage of the MOSFET. While this behaviour is observed for MOSFETs from one manufacturer, it is not exhibited for others, which indicates that it may be a consequence of some particular design or manufacturing parameters.

UR - http://www.scopus.com/inward/record.url?scp=85049324193&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049324193&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2018.06.033

DO - 10.1016/j.microrel.2018.06.033

M3 - Article

VL - 88-90

SP - 636

EP - 640

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -