Three types of self-activated luminescence centers in CdS

O

N. K. Morozova, N. D. Danilevich, V. I. Oleshko, Svetlana Sergeevna Vil'chinskaya

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.

Original languageEnglish
Pages (from-to)1661-1666
Number of pages6
JournalSemiconductors
Volume47
Issue number13
DOIs
Publication statusPublished - 2013

Fingerprint

Luminescence
luminescence
Oxygen
Crystals
oxygen
crystals
Cathodoluminescence
Point defects
cathodoluminescence
color centers
point defects
Energy gap
X rays
x rays

Keywords

  • edge emission
  • intrinsic point defects
  • luminescence
  • self-activated luminescence

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Three types of self-activated luminescence centers in CdS : O. / Morozova, N. K.; Danilevich, N. D.; Oleshko, V. I.; Vil'chinskaya, Svetlana Sergeevna.

In: Semiconductors, Vol. 47, No. 13, 2013, p. 1661-1666.

Research output: Contribution to journalArticle

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