Abstract
The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.
| Original language | English |
|---|---|
| Pages (from-to) | 1661-1666 |
| Number of pages | 6 |
| Journal | Semiconductors |
| Volume | 47 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2013 |
Keywords
- edge emission
- intrinsic point defects
- luminescence
- self-activated luminescence
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
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Cite this
Morozova, N. K., Danilevich, N. D., Oleshko, V. I., & Vil'chinskaya, S. S. (2013). Three types of self-activated luminescence centers in CdS: O. Semiconductors, 47(13), 1661-1666. https://doi.org/10.1134/S1063782613130125