Three types of self-activated luminescence centers in CdS: O

N. K. Morozova, N. D. Danilevich, V. I. Oleshko, Svetlana Sergeevna Vil'chinskaya

Division for Materials Science

Research output: Contribution to journal › Article

Abstract

The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F ⁺ centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.

Original language	English
Pages (from-to)	1661-1666
Number of pages	6
Journal	Semiconductors
Volume	47
Issue number	13
DOIs	https://doi.org/10.1134/S1063782613130125
Publication status	Published - 2013

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Keywords

edge emission
intrinsic point defects
luminescence
self-activated luminescence

ASJC Scopus subject areas

Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

Morozova, N. K., Danilevich, N. D., Oleshko, V. I., & Vil'chinskaya, S. S. (2013). Three types of self-activated luminescence centers in CdS: O. Semiconductors, 47(13), 1661-1666. https://doi.org/10.1134/S1063782613130125

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abstract = "The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.",

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AU - Morozova, N. K.

AU - Danilevich, N. D.

AU - Oleshko, V. I.

AU - Vil'chinskaya, Svetlana Sergeevna

PY - 2013

Y1 - 2013

N2 - The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.

AB - The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.

KW - edge emission

KW - intrinsic point defects

KW - luminescence

KW - self-activated luminescence

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Access to Document

10.1134/S1063782613130125