Abstract
The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.
| Original language | English |
|---|---|
| Pages (from-to) | 1661-1666 |
| Number of pages | 6 |
| Journal | Semiconductors |
| Volume | 47 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2013 |
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Keywords
- edge emission
- intrinsic point defects
- luminescence
- self-activated luminescence
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
Cite this
Three types of self-activated luminescence centers in CdS : O. / Morozova, N. K.; Danilevich, N. D.; Oleshko, V. I.; Vil'chinskaya, Svetlana Sergeevna.
In: Semiconductors, Vol. 47, No. 13, 2013, p. 1661-1666.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Three types of self-activated luminescence centers in CdS
T2 - O
AU - Morozova, N. K.
AU - Danilevich, N. D.
AU - Oleshko, V. I.
AU - Vil'chinskaya, Svetlana Sergeevna
PY - 2013
Y1 - 2013
N2 - The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.
AB - The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.
KW - edge emission
KW - intrinsic point defects
KW - luminescence
KW - self-activated luminescence
UR - http://www.scopus.com/inward/record.url?scp=84890545621&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84890545621&partnerID=8YFLogxK
U2 - 10.1134/S1063782613130125
DO - 10.1134/S1063782613130125
M3 - Article
VL - 47
SP - 1661
EP - 1666
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 13
ER -