Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN

Sondes Bauer, Sergey Lazarev, Martin Bauer, Tobias Meisch, Marian Caliebe, Václav Holý, Ferdinand Scholz, Tilo Baumbach

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A rapid nondestructive defect assessment and quantification method based on X-ray diffraction and three-dimensional reciprocal-space mapping has been established. A fast read-out two-dimensional detector with a high dynamic range of 20bits, in combination with a powerful data analysis software package, is set up to provide fast feedback to crystal growers with the goal of supporting the development of reduced defect density GaN growth techniques. This would contribute strongly to the improvement of the crystal quality of epitaxial structures and therefore of optoelectronic properties. The method of normalized three-dimensional reciprocal-space mapping is found to be a reliable tool which shows clearly the influence of the parameters of the metal-organic vapour phase epitaxial and hydride vapour phase epitaxial (HVPE) growth methods on the extent of the diffuse scattering streak. This method enables determination of the basal stacking faults and an exploration of the presence of other types of defect such as partial dislocations and prismatic stacking faults. Three-dimensional reciprocal-space mapping is specifically used in the manuscript to determine basal stacking faults quantitatively and to discuss the presence of partial dislocations. This newly developed method has been applied to semipolar GaN structures grown on patterned sapphire substrates (PSSs). The fitting of the diffuse scattering intensity profiles along the stacking fault streaks with simulations based on a Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. Three-dimensional reciprocal-space mapping is shown to be a method sensitive to the influence of crystallographic surface orientation on basal stacking fault densities during investigation of semipolar ((1122) GaN grown on an r-plane (1102) PSS and semipolar (1011) GaN grown on an n-plane (1123) PSS. Moreover, the influence of HVPE overgrowth at reduced temperature on the quality of semipolar ((1122) GaN has been studied.

Original languageEnglish
Pages (from-to)1000-1010
Number of pages11
JournalJournal of Applied Crystallography
Volume48
DOIs
Publication statusPublished - 1 Aug 2015
Externally publishedYes

Fingerprint

Stacking faults
Detectors
Defects
Aluminum Oxide
Growth
Hydrides
Substrates
Vapors
Scattering
Crystals
Vapor phase epitaxy
Manuscripts
Defect density
Quality Improvement
Dislocations (crystals)
Software packages
X-Ray Diffraction
Crystal orientation
Optoelectronic devices
Software

Keywords

  • defects
  • influence of growth parameters
  • semipolar GaN
  • three-dimensional reciprocal-space mapping

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)

Cite this

Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN. / Bauer, Sondes; Lazarev, Sergey; Bauer, Martin; Meisch, Tobias; Caliebe, Marian; Holý, Václav; Scholz, Ferdinand; Baumbach, Tilo.

In: Journal of Applied Crystallography, Vol. 48, 01.08.2015, p. 1000-1010.

Research output: Contribution to journalArticle

Bauer, Sondes ; Lazarev, Sergey ; Bauer, Martin ; Meisch, Tobias ; Caliebe, Marian ; Holý, Václav ; Scholz, Ferdinand ; Baumbach, Tilo. / Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN. In: Journal of Applied Crystallography. 2015 ; Vol. 48. pp. 1000-1010.
@article{9e84b25af5f54cd2ae30500d43da32f6,
title = "Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN",
abstract = "A rapid nondestructive defect assessment and quantification method based on X-ray diffraction and three-dimensional reciprocal-space mapping has been established. A fast read-out two-dimensional detector with a high dynamic range of 20bits, in combination with a powerful data analysis software package, is set up to provide fast feedback to crystal growers with the goal of supporting the development of reduced defect density GaN growth techniques. This would contribute strongly to the improvement of the crystal quality of epitaxial structures and therefore of optoelectronic properties. The method of normalized three-dimensional reciprocal-space mapping is found to be a reliable tool which shows clearly the influence of the parameters of the metal-organic vapour phase epitaxial and hydride vapour phase epitaxial (HVPE) growth methods on the extent of the diffuse scattering streak. This method enables determination of the basal stacking faults and an exploration of the presence of other types of defect such as partial dislocations and prismatic stacking faults. Three-dimensional reciprocal-space mapping is specifically used in the manuscript to determine basal stacking faults quantitatively and to discuss the presence of partial dislocations. This newly developed method has been applied to semipolar GaN structures grown on patterned sapphire substrates (PSSs). The fitting of the diffuse scattering intensity profiles along the stacking fault streaks with simulations based on a Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. Three-dimensional reciprocal-space mapping is shown to be a method sensitive to the influence of crystallographic surface orientation on basal stacking fault densities during investigation of semipolar ((1122) GaN grown on an r-plane (1102) PSS and semipolar (1011) GaN grown on an n-plane (1123) PSS. Moreover, the influence of HVPE overgrowth at reduced temperature on the quality of semipolar ((1122) GaN has been studied.",
keywords = "defects, influence of growth parameters, semipolar GaN, three-dimensional reciprocal-space mapping",
author = "Sondes Bauer and Sergey Lazarev and Martin Bauer and Tobias Meisch and Marian Caliebe and V{\'a}clav Hol{\'y} and Ferdinand Scholz and Tilo Baumbach",
year = "2015",
month = "8",
day = "1",
doi = "10.1107/S1600576715009085",
language = "English",
volume = "48",
pages = "1000--1010",
journal = "Journal of Applied Crystallography",
issn = "0021-8898",
publisher = "International Union of Crystallography",

}

TY - JOUR

T1 - Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN

AU - Bauer, Sondes

AU - Lazarev, Sergey

AU - Bauer, Martin

AU - Meisch, Tobias

AU - Caliebe, Marian

AU - Holý, Václav

AU - Scholz, Ferdinand

AU - Baumbach, Tilo

PY - 2015/8/1

Y1 - 2015/8/1

N2 - A rapid nondestructive defect assessment and quantification method based on X-ray diffraction and three-dimensional reciprocal-space mapping has been established. A fast read-out two-dimensional detector with a high dynamic range of 20bits, in combination with a powerful data analysis software package, is set up to provide fast feedback to crystal growers with the goal of supporting the development of reduced defect density GaN growth techniques. This would contribute strongly to the improvement of the crystal quality of epitaxial structures and therefore of optoelectronic properties. The method of normalized three-dimensional reciprocal-space mapping is found to be a reliable tool which shows clearly the influence of the parameters of the metal-organic vapour phase epitaxial and hydride vapour phase epitaxial (HVPE) growth methods on the extent of the diffuse scattering streak. This method enables determination of the basal stacking faults and an exploration of the presence of other types of defect such as partial dislocations and prismatic stacking faults. Three-dimensional reciprocal-space mapping is specifically used in the manuscript to determine basal stacking faults quantitatively and to discuss the presence of partial dislocations. This newly developed method has been applied to semipolar GaN structures grown on patterned sapphire substrates (PSSs). The fitting of the diffuse scattering intensity profiles along the stacking fault streaks with simulations based on a Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. Three-dimensional reciprocal-space mapping is shown to be a method sensitive to the influence of crystallographic surface orientation on basal stacking fault densities during investigation of semipolar ((1122) GaN grown on an r-plane (1102) PSS and semipolar (1011) GaN grown on an n-plane (1123) PSS. Moreover, the influence of HVPE overgrowth at reduced temperature on the quality of semipolar ((1122) GaN has been studied.

AB - A rapid nondestructive defect assessment and quantification method based on X-ray diffraction and three-dimensional reciprocal-space mapping has been established. A fast read-out two-dimensional detector with a high dynamic range of 20bits, in combination with a powerful data analysis software package, is set up to provide fast feedback to crystal growers with the goal of supporting the development of reduced defect density GaN growth techniques. This would contribute strongly to the improvement of the crystal quality of epitaxial structures and therefore of optoelectronic properties. The method of normalized three-dimensional reciprocal-space mapping is found to be a reliable tool which shows clearly the influence of the parameters of the metal-organic vapour phase epitaxial and hydride vapour phase epitaxial (HVPE) growth methods on the extent of the diffuse scattering streak. This method enables determination of the basal stacking faults and an exploration of the presence of other types of defect such as partial dislocations and prismatic stacking faults. Three-dimensional reciprocal-space mapping is specifically used in the manuscript to determine basal stacking faults quantitatively and to discuss the presence of partial dislocations. This newly developed method has been applied to semipolar GaN structures grown on patterned sapphire substrates (PSSs). The fitting of the diffuse scattering intensity profiles along the stacking fault streaks with simulations based on a Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. Three-dimensional reciprocal-space mapping is shown to be a method sensitive to the influence of crystallographic surface orientation on basal stacking fault densities during investigation of semipolar ((1122) GaN grown on an r-plane (1102) PSS and semipolar (1011) GaN grown on an n-plane (1123) PSS. Moreover, the influence of HVPE overgrowth at reduced temperature on the quality of semipolar ((1122) GaN has been studied.

KW - defects

KW - influence of growth parameters

KW - semipolar GaN

KW - three-dimensional reciprocal-space mapping

UR - http://www.scopus.com/inward/record.url?scp=84938403673&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938403673&partnerID=8YFLogxK

U2 - 10.1107/S1600576715009085

DO - 10.1107/S1600576715009085

M3 - Article

VL - 48

SP - 1000

EP - 1010

JO - Journal of Applied Crystallography

JF - Journal of Applied Crystallography

SN - 0021-8898

ER -