Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (112 2) GaN layers grown from the sidewall of an r-patterned sapphire substrate

Sergey Lazarev, Sondes Bauer, Tobias Meisch, Martin Bauer, Ingo Tischer, Mykhailo Barchuk, Klaus Thonke, Vaclav Holy, Ferdinand Scholz, Tilo Baumbach

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Three-dimensional reciprocal space mapping of semipolar ( ) GaN grown on stripe-patterned r-plane ( ) sapphire substrates is found to be a powerful and crucial method for the analysis of diffuse scattering originating from stacking faults that are diffracting in a noncoplanar geometry. Additionally, by measuring three-dimensional reciprocal space maps (3D-RSMs) of several reflections, the transmission electron microscopy visibility criteria could be confirmed. Furthermore, similar to cathodoluminescence, the 3D-RSM method could be used in future as a reliable tool to distinguish clearly between the diffuse scattering signals coming from prismatic and from basal plane stacking faults and from partial dislocations in semipolar ( ) GaN. The fitting of the diffuse scattering intensity profile along the stacking fault streaks with a simulation based on the Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. A reduction of the stacking fault density due to the intercalation of an SiN interlayer in the GaN layer deposited on the sidewall of the pre-patterned sapphire substrate has led to an improvement of the optoelectronic properties, influenced by the crystal quality, as has been demonstrated by a locally resolved cathodoluminescence investigation.

Original languageEnglish
Pages (from-to)1425-1433
Number of pages9
JournalJournal of Applied Crystallography
Volume46
Issue number5
DOIs
Publication statusPublished - Oct 2013
Externally publishedYes

Fingerprint

Aluminum Oxide
Stacking faults
Scattering
Substrates
Transmission Electron Microscopy
Cathodoluminescence
Intercalation
Dislocations (crystals)
Visibility
Optoelectronic devices
Transmission electron microscopy
Crystals
Geometry

Keywords

  • diffuse scattering
  • stacking faults
  • three-dimensional reciprocal space mapping

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)

Cite this

Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (112 2) GaN layers grown from the sidewall of an r-patterned sapphire substrate. / Lazarev, Sergey; Bauer, Sondes; Meisch, Tobias; Bauer, Martin; Tischer, Ingo; Barchuk, Mykhailo; Thonke, Klaus; Holy, Vaclav; Scholz, Ferdinand; Baumbach, Tilo.

In: Journal of Applied Crystallography, Vol. 46, No. 5, 10.2013, p. 1425-1433.

Research output: Contribution to journalArticle

Lazarev, Sergey ; Bauer, Sondes ; Meisch, Tobias ; Bauer, Martin ; Tischer, Ingo ; Barchuk, Mykhailo ; Thonke, Klaus ; Holy, Vaclav ; Scholz, Ferdinand ; Baumbach, Tilo. / Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (112 2) GaN layers grown from the sidewall of an r-patterned sapphire substrate. In: Journal of Applied Crystallography. 2013 ; Vol. 46, No. 5. pp. 1425-1433.
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