Thin film preparation using focused high power ion beam

Abstract

The use of focused high power ion beam in thin film preparation is discussed. The ion beam was generated in focusing B-applied diode at GIMN accelerator. It consisted of approximately 70% protons and 30% carbon ions. The ion density in the focal plane reached 9 kA/cm² that corresponds to 300 J/cm². The thickness of the precipitated films made up to 100 nm per shot at the distance between target and substrate is 4 cm and the electrical resistance is at the level of 100 ohms. The ellypsometric data obtained with scanning electron microscope are also given. This method has high precision velocity, moderate vacuum conditions, and high melting temperature target usage.

Original language	English
Title of host publication	Digest of Technical Papers-IEEE International Pulsed Power Conference
Editors	W.L. Baker, G. Cooperstein
Place of Publication	Piscataway, NJ, United States
Publisher	IEEE
Pages	1221-1226
Number of pages	6
Volume	2
Publication status	Published - 1995
Event	Proceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2) - Albuquerque, NM, USA Duration: 3 Jul 1995 → 6 Jul 1995

Other

Other	Proceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2)
City	Albuquerque, NM, USA
Period	3.7.95 → 6.7.95

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Thin film preparation using focused high power ion beam. / Bystritskii, Vit M.; Volkov, S. N.; Mytnikov, A. V.; Sinebryukhov, A. A.; Rej, D. J.

Digest of Technical Papers-IEEE International Pulsed Power Conference. ed. / W.L. Baker; G. Cooperstein. Vol. 2 Piscataway, NJ, United States : IEEE, 1995. p. 1221-1226.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bystritskii, VM, Volkov, SN, Mytnikov, AV, Sinebryukhov, AA & Rej, DJ 1995, Thin film preparation using focused high power ion beam. in WL Baker & G Cooperstein (eds), Digest of Technical Papers-IEEE International Pulsed Power Conference. vol. 2, IEEE, Piscataway, NJ, United States, pp. 1221-1226, Proceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2), Albuquerque, NM, USA, 3.7.95.

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title = "Thin film preparation using focused high power ion beam",

abstract = "The use of focused high power ion beam in thin film preparation is discussed. The ion beam was generated in focusing B-applied diode at GIMN accelerator. It consisted of approximately 70% protons and 30% carbon ions. The ion density in the focal plane reached 9 kA/cm2 that corresponds to 300 J/cm2. The thickness of the precipitated films made up to 100 nm per shot at the distance between target and substrate is 4 cm and the electrical resistance is at the level of 100 ohms. The ellypsometric data obtained with scanning electron microscope are also given. This method has high precision velocity, moderate vacuum conditions, and high melting temperature target usage.",

author = "Bystritskii, {Vit M.} and Volkov, {S. N.} and Mytnikov, {A. V.} and Sinebryukhov, {A. A.} and Rej, {D. J.}",

year = "1995",

language = "English",

volume = "2",

pages = "1221--1226",

editor = "W.L. Baker and G. Cooperstein",

booktitle = "Digest of Technical Papers-IEEE International Pulsed Power Conference",

publisher = "IEEE",

note = "Proceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2) ; Conference date: 03-07-1995 Through 06-07-1995",

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T1 - Thin film preparation using focused high power ion beam

AU - Bystritskii, Vit M.

AU - Volkov, S. N.

AU - Mytnikov, A. V.

AU - Sinebryukhov, A. A.

AU - Rej, D. J.

PY - 1995

Y1 - 1995

N2 - The use of focused high power ion beam in thin film preparation is discussed. The ion beam was generated in focusing B-applied diode at GIMN accelerator. It consisted of approximately 70% protons and 30% carbon ions. The ion density in the focal plane reached 9 kA/cm2 that corresponds to 300 J/cm2. The thickness of the precipitated films made up to 100 nm per shot at the distance between target and substrate is 4 cm and the electrical resistance is at the level of 100 ohms. The ellypsometric data obtained with scanning electron microscope are also given. This method has high precision velocity, moderate vacuum conditions, and high melting temperature target usage.

AB - The use of focused high power ion beam in thin film preparation is discussed. The ion beam was generated in focusing B-applied diode at GIMN accelerator. It consisted of approximately 70% protons and 30% carbon ions. The ion density in the focal plane reached 9 kA/cm2 that corresponds to 300 J/cm2. The thickness of the precipitated films made up to 100 nm per shot at the distance between target and substrate is 4 cm and the electrical resistance is at the level of 100 ohms. The ellypsometric data obtained with scanning electron microscope are also given. This method has high precision velocity, moderate vacuum conditions, and high melting temperature target usage.

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M3 - Conference contribution

AN - SCOPUS:0029423638

VL - 2

SP - 1221

EP - 1226

BT - Digest of Technical Papers-IEEE International Pulsed Power Conference

A2 - Baker, W.L.

A2 - Cooperstein, G.

PB - IEEE

CY - Piscataway, NJ, United States

T2 - Proceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2)

Y2 - 3 July 1995 through 6 July 1995

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