Thin film preparation using focused high power ion beam

Vit M. Bystritskii, S. N. Volkov, A. V. Mytnikov, A. A. Sinebryukhov, D. J. Rej

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The use of focused high power ion beam in thin film preparation is discussed. The ion beam was generated in focusing B-applied diode at GIMN accelerator. It consisted of approximately 70% protons and 30% carbon ions. The ion density in the focal plane reached 9 kA/cm2 that corresponds to 300 J/cm2. The thickness of the precipitated films made up to 100 nm per shot at the distance between target and substrate is 4 cm and the electrical resistance is at the level of 100 ohms. The ellypsometric data obtained with scanning electron microscope are also given. This method has high precision velocity, moderate vacuum conditions, and high melting temperature target usage.

Original languageEnglish
Title of host publicationDigest of Technical Papers-IEEE International Pulsed Power Conference
EditorsW.L. Baker, G. Cooperstein
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages1221-1226
Number of pages6
Volume2
Publication statusPublished - 1995
EventProceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2) - Albuquerque, NM, USA
Duration: 3 Jul 19956 Jul 1995

Other

OtherProceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2)
CityAlbuquerque, NM, USA
Period3.7.956.7.95

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Bystritskii, V. M., Volkov, S. N., Mytnikov, A. V., Sinebryukhov, A. A., & Rej, D. J. (1995). Thin film preparation using focused high power ion beam. In W. L. Baker, & G. Cooperstein (Eds.), Digest of Technical Papers-IEEE International Pulsed Power Conference (Vol. 2, pp. 1221-1226). Piscataway, NJ, United States: IEEE.