Abstract
The article reports on thermal stability of the structure and mechanical properties of Zr-Si-N films with a high (≥ 25 at.%) Si content deposited from a ceramic ZrSi2 target by reactive magnetron sputtering. The annealed films were characterized using X-ray diffraction, microhardness and macrostress measurements, and differential scanning calorimetry. Special attention was devoted to the influence of the annealing temperature (up to 1600 °C), annealing environment and presence of the substrate. It was found that the phase composition of the films strongly influences its thermal stability. Furthermore, (i) microhardness of the Zr-Si-N films sputtered under conditions used in our experiments is determined by their structure and not by the macrostress, (ii) crystallization of the X-ray amorphous films strongly depends on its phase composition, the ambient atmosphere and the incorporation of the substrate elements into the film due to interdiffusion during annealing, and (iii) X-ray amorphous Zr-Si-N films containing a high (≥ 50 vol.%) content of the Si3N4 phase exhibit the highest thermal stability considerably exceeding 1000 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 3368-3376 |
| Number of pages | 9 |
| Journal | Surface and Coatings Technology |
| Volume | 201 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 4 Dec 2006 |
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Keywords
- Crystallization
- High SiN content
- Magnetron sputtering
- Thermal stability
- Zr-Si-N films
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
Thermal stability of magnetron sputtered Zr-Si-N films. / Daniel, R.; Musil, J.; Zeman, P.; Mitterer, C.
In: Surface and Coatings Technology, Vol. 201, No. 6, 04.12.2006, p. 3368-3376.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Thermal stability of magnetron sputtered Zr-Si-N films
AU - Daniel, R.
AU - Musil, J.
AU - Zeman, P.
AU - Mitterer, C.
PY - 2006/12/4
Y1 - 2006/12/4
N2 - The article reports on thermal stability of the structure and mechanical properties of Zr-Si-N films with a high (≥ 25 at.%) Si content deposited from a ceramic ZrSi2 target by reactive magnetron sputtering. The annealed films were characterized using X-ray diffraction, microhardness and macrostress measurements, and differential scanning calorimetry. Special attention was devoted to the influence of the annealing temperature (up to 1600 °C), annealing environment and presence of the substrate. It was found that the phase composition of the films strongly influences its thermal stability. Furthermore, (i) microhardness of the Zr-Si-N films sputtered under conditions used in our experiments is determined by their structure and not by the macrostress, (ii) crystallization of the X-ray amorphous films strongly depends on its phase composition, the ambient atmosphere and the incorporation of the substrate elements into the film due to interdiffusion during annealing, and (iii) X-ray amorphous Zr-Si-N films containing a high (≥ 50 vol.%) content of the Si3N4 phase exhibit the highest thermal stability considerably exceeding 1000 °C.
AB - The article reports on thermal stability of the structure and mechanical properties of Zr-Si-N films with a high (≥ 25 at.%) Si content deposited from a ceramic ZrSi2 target by reactive magnetron sputtering. The annealed films were characterized using X-ray diffraction, microhardness and macrostress measurements, and differential scanning calorimetry. Special attention was devoted to the influence of the annealing temperature (up to 1600 °C), annealing environment and presence of the substrate. It was found that the phase composition of the films strongly influences its thermal stability. Furthermore, (i) microhardness of the Zr-Si-N films sputtered under conditions used in our experiments is determined by their structure and not by the macrostress, (ii) crystallization of the X-ray amorphous films strongly depends on its phase composition, the ambient atmosphere and the incorporation of the substrate elements into the film due to interdiffusion during annealing, and (iii) X-ray amorphous Zr-Si-N films containing a high (≥ 50 vol.%) content of the Si3N4 phase exhibit the highest thermal stability considerably exceeding 1000 °C.
KW - Crystallization
KW - High SiN content
KW - Magnetron sputtering
KW - Thermal stability
KW - Zr-Si-N films
UR - http://www.scopus.com/inward/record.url?scp=33750973045&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33750973045&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2006.07.206
DO - 10.1016/j.surfcoat.2006.07.206
M3 - Article
VL - 201
SP - 3368
EP - 3376
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
IS - 6
ER -