Thermal stability of alumina thin films containing γ-Al 2 O 3 phase prepared by reactive magnetron sputtering

J. Musil, J. Blažek, P. Zeman, Š Prokšová, M. Šašek, R. Čerstvý

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82 Citations (Scopus)

Abstract

The paper reports on thermal stability of alumina thin films containing γ-Al 2 O 3 phase and its conversion to a thermodynamically stable α-Al 2 O 3 phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 °C to 1150 °C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline γ-Al 2 O 3 phase in the films is thermally stable up to 1000 °C even after 5 h of annealing, (2) the nanocrystalline θ-Al 2 O 3 phase was observed in a narrow time and temperature region at ≥1050 °C, and (3) annealing at 1100 °C for 2 h resulted in a dominance of the α-Al 2 O 3 phase only in the films with a sufficient thickness.

Original languageEnglish
Pages (from-to)1058-1062
Number of pages5
JournalApplied Surface Science
Volume257
Issue number3
DOIs
Publication statusPublished - 15 Nov 2010

Keywords

  • Annealing
  • Nanocrystalline material
  • Sputtering
  • Thermal stability

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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