Thermal measurement of losses of GaN power transistors for optimization of their drive

Lionel Hoffmann, Cyrille Gautier, Stephane Lefebvre, Francois Costa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, we present a thermal measurement method of the losses of eGaN-FET power transistor used in one phase leg. The dead-times are important to avoid short-circuit phase, but they can lead to a large part of the total losses because of reverse conduction. Thus, the drive must be optimized according to load current to keep losses at lowest lever.

Original languageEnglish
Title of host publication2013 15th European Conference on Power Electronics and Applications, EPE 2013
DOIs
Publication statusPublished - 17 Dec 2013
Externally publishedYes
Event2013 15th European Conference on Power Electronics and Applications, EPE 2013 - Lille, France
Duration: 2 Sep 20136 Sep 2013

Publication series

Name2013 15th European Conference on Power Electronics and Applications, EPE 2013

Conference

Conference2013 15th European Conference on Power Electronics and Applications, EPE 2013
CountryFrance
CityLille
Period2.9.136.9.13

Keywords

  • Gallium nitride
  • High frequency power converter
  • Power semiconductor device
  • Switching losses
  • Wide bandgap devices

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology
  • Electrical and Electronic Engineering

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  • Cite this

    Hoffmann, L., Gautier, C., Lefebvre, S., & Costa, F. (2013). Thermal measurement of losses of GaN power transistors for optimization of their drive. In 2013 15th European Conference on Power Electronics and Applications, EPE 2013 [6634623] (2013 15th European Conference on Power Electronics and Applications, EPE 2013). https://doi.org/10.1109/EPE.2013.6634623