Abstract
This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circuit Board (PCB) substrates. Wide bandgap (WBG) power semiconductors like GaN devices have the ability to operate at high switching-frequency (from few 100 kHz to several MHz). To take advantage of their high frequency switching capabilities, the parasitic inductances of power connections as well as the connections between the dies and the gate driver must be minimized. So the majority of GaN chips available on the market are packaged so that they can be directly attached to a PCB. The embedding technology of GaN dies in PCB substrate is attractive because it offers various interconnection possibilities. However, the low thermal conductivity of glass epoxy will result in high thermal resistance of the substrate. So it is of the first importance to seek technological means in order to improve the cooling of GaN chips soldered or embedded in such PCB structures.
| Original language | English |
|---|---|
| Title of host publication | 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781509042784 |
| DOIs | |
| Publication status | Published - 31 May 2017 |
| Externally published | Yes |
| Event | 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017 - Delft, Netherlands Duration: 5 Apr 2017 → 7 Apr 2017 |
Publication series
| Name | 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017 |
|---|
Conference
| Conference | 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017 |
|---|---|
| Country | Netherlands |
| City | Delft |
| Period | 5.4.17 → 7.4.17 |
Fingerprint
Keywords
- 3D Packaging
- GaN HEMT
- PCB substrates
- thermal management solutions
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Polymers and Plastics
Cite this
Thermal management for GaN power devices mounted on PCB substrates. / Zhang, Shuangfeng; Laboure, Eric; Labrousse, Denis; Lefebvre, Stephane.
2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7936752 (2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Thermal management for GaN power devices mounted on PCB substrates
AU - Zhang, Shuangfeng
AU - Laboure, Eric
AU - Labrousse, Denis
AU - Lefebvre, Stephane
PY - 2017/5/31
Y1 - 2017/5/31
N2 - This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circuit Board (PCB) substrates. Wide bandgap (WBG) power semiconductors like GaN devices have the ability to operate at high switching-frequency (from few 100 kHz to several MHz). To take advantage of their high frequency switching capabilities, the parasitic inductances of power connections as well as the connections between the dies and the gate driver must be minimized. So the majority of GaN chips available on the market are packaged so that they can be directly attached to a PCB. The embedding technology of GaN dies in PCB substrate is attractive because it offers various interconnection possibilities. However, the low thermal conductivity of glass epoxy will result in high thermal resistance of the substrate. So it is of the first importance to seek technological means in order to improve the cooling of GaN chips soldered or embedded in such PCB structures.
AB - This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circuit Board (PCB) substrates. Wide bandgap (WBG) power semiconductors like GaN devices have the ability to operate at high switching-frequency (from few 100 kHz to several MHz). To take advantage of their high frequency switching capabilities, the parasitic inductances of power connections as well as the connections between the dies and the gate driver must be minimized. So the majority of GaN chips available on the market are packaged so that they can be directly attached to a PCB. The embedding technology of GaN dies in PCB substrate is attractive because it offers various interconnection possibilities. However, the low thermal conductivity of glass epoxy will result in high thermal resistance of the substrate. So it is of the first importance to seek technological means in order to improve the cooling of GaN chips soldered or embedded in such PCB structures.
KW - 3D Packaging
KW - GaN HEMT
KW - PCB substrates
KW - thermal management solutions
UR - http://www.scopus.com/inward/record.url?scp=85025694647&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85025694647&partnerID=8YFLogxK
U2 - 10.1109/IWIPP.2017.7936752
DO - 10.1109/IWIPP.2017.7936752
M3 - Conference contribution
AN - SCOPUS:85025694647
T3 - 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017
BT - 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -