Thermal management for GaN power devices mounted on PCB substrates

Shuangfeng Zhang, Eric Laboure, Denis Labrousse, Stephane Lefebvre

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circuit Board (PCB) substrates. Wide bandgap (WBG) power semiconductors like GaN devices have the ability to operate at high switching-frequency (from few 100 kHz to several MHz). To take advantage of their high frequency switching capabilities, the parasitic inductances of power connections as well as the connections between the dies and the gate driver must be minimized. So the majority of GaN chips available on the market are packaged so that they can be directly attached to a PCB. The embedding technology of GaN dies in PCB substrate is attractive because it offers various interconnection possibilities. However, the low thermal conductivity of glass epoxy will result in high thermal resistance of the substrate. So it is of the first importance to seek technological means in order to improve the cooling of GaN chips soldered or embedded in such PCB structures.

Original languageEnglish
Title of host publication2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509042784
DOIs
Publication statusPublished - 31 May 2017
Externally publishedYes
Event2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017 - Delft, Netherlands
Duration: 5 Apr 20177 Apr 2017

Publication series

Name2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017

Conference

Conference2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017
CountryNetherlands
CityDelft
Period5.4.177.4.17

Fingerprint

Printed circuit boards
Switching frequency
Substrates
High electron mobility transistors
Heat resistance
Inductance
Thermal conductivity
Energy gap
Semiconductor materials
Cooling
Glass
Thermal management (electronics)

Keywords

  • 3D Packaging
  • GaN HEMT
  • PCB substrates
  • thermal management solutions

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Polymers and Plastics

Cite this

Zhang, S., Laboure, E., Labrousse, D., & Lefebvre, S. (2017). Thermal management for GaN power devices mounted on PCB substrates. In 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017 [7936752] (2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWIPP.2017.7936752

Thermal management for GaN power devices mounted on PCB substrates. / Zhang, Shuangfeng; Laboure, Eric; Labrousse, Denis; Lefebvre, Stephane.

2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7936752 (2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, S, Laboure, E, Labrousse, D & Lefebvre, S 2017, Thermal management for GaN power devices mounted on PCB substrates. in 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017., 7936752, 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017, Institute of Electrical and Electronics Engineers Inc., 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017, Delft, Netherlands, 5.4.17. https://doi.org/10.1109/IWIPP.2017.7936752
Zhang S, Laboure E, Labrousse D, Lefebvre S. Thermal management for GaN power devices mounted on PCB substrates. In 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7936752. (2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017). https://doi.org/10.1109/IWIPP.2017.7936752
Zhang, Shuangfeng ; Laboure, Eric ; Labrousse, Denis ; Lefebvre, Stephane. / Thermal management for GaN power devices mounted on PCB substrates. 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017. Institute of Electrical and Electronics Engineers Inc., 2017. (2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017).
@inproceedings{4a66ac07edba46ce81692d5fc80674db,
title = "Thermal management for GaN power devices mounted on PCB substrates",
abstract = "This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circuit Board (PCB) substrates. Wide bandgap (WBG) power semiconductors like GaN devices have the ability to operate at high switching-frequency (from few 100 kHz to several MHz). To take advantage of their high frequency switching capabilities, the parasitic inductances of power connections as well as the connections between the dies and the gate driver must be minimized. So the majority of GaN chips available on the market are packaged so that they can be directly attached to a PCB. The embedding technology of GaN dies in PCB substrate is attractive because it offers various interconnection possibilities. However, the low thermal conductivity of glass epoxy will result in high thermal resistance of the substrate. So it is of the first importance to seek technological means in order to improve the cooling of GaN chips soldered or embedded in such PCB structures.",
keywords = "3D Packaging, GaN HEMT, PCB substrates, thermal management solutions",
author = "Shuangfeng Zhang and Eric Laboure and Denis Labrousse and Stephane Lefebvre",
year = "2017",
month = "5",
day = "31",
doi = "10.1109/IWIPP.2017.7936752",
language = "English",
series = "2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017",
address = "United States",

}

TY - GEN

T1 - Thermal management for GaN power devices mounted on PCB substrates

AU - Zhang, Shuangfeng

AU - Laboure, Eric

AU - Labrousse, Denis

AU - Lefebvre, Stephane

PY - 2017/5/31

Y1 - 2017/5/31

N2 - This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circuit Board (PCB) substrates. Wide bandgap (WBG) power semiconductors like GaN devices have the ability to operate at high switching-frequency (from few 100 kHz to several MHz). To take advantage of their high frequency switching capabilities, the parasitic inductances of power connections as well as the connections between the dies and the gate driver must be minimized. So the majority of GaN chips available on the market are packaged so that they can be directly attached to a PCB. The embedding technology of GaN dies in PCB substrate is attractive because it offers various interconnection possibilities. However, the low thermal conductivity of glass epoxy will result in high thermal resistance of the substrate. So it is of the first importance to seek technological means in order to improve the cooling of GaN chips soldered or embedded in such PCB structures.

AB - This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circuit Board (PCB) substrates. Wide bandgap (WBG) power semiconductors like GaN devices have the ability to operate at high switching-frequency (from few 100 kHz to several MHz). To take advantage of their high frequency switching capabilities, the parasitic inductances of power connections as well as the connections between the dies and the gate driver must be minimized. So the majority of GaN chips available on the market are packaged so that they can be directly attached to a PCB. The embedding technology of GaN dies in PCB substrate is attractive because it offers various interconnection possibilities. However, the low thermal conductivity of glass epoxy will result in high thermal resistance of the substrate. So it is of the first importance to seek technological means in order to improve the cooling of GaN chips soldered or embedded in such PCB structures.

KW - 3D Packaging

KW - GaN HEMT

KW - PCB substrates

KW - thermal management solutions

UR - http://www.scopus.com/inward/record.url?scp=85025694647&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85025694647&partnerID=8YFLogxK

U2 - 10.1109/IWIPP.2017.7936752

DO - 10.1109/IWIPP.2017.7936752

M3 - Conference contribution

T3 - 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017

BT - 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -