A thermal behaviour study of insulated gate bipolar transistors (IGBTs) is presented. Particularly studied is the stored charge variation in IGBT structures when the temperature increases in connection with the device technology. The evaluation of the stored charge vs. temperature is important in order to quantify turnoff losses due to current tail, and to avoid thermal instability of the device in its application. Also summarized are the two kinds of electrical temperature sensitiveness in connection with the IGBT technology.
|Number of pages||6|
|Journal||IEE Conference Publication|
|Publication status||Published - 1 Dec 1994|
|Event||Proceedings of the 5th International Conference on Power Electronics and Variable-Speed Drives - London, UK|
Duration: 26 Oct 1994 → 28 Oct 1994
ASJC Scopus subject areas
- Electrical and Electronic Engineering