Thermal behaviour of PT and NPT IGBT

F. Calmon, S. Lefebvre, J. P. Chante, D. Ligot, B. Reymond

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

A thermal behaviour study of insulated gate bipolar transistors (IGBTs) is presented. Particularly studied is the stored charge variation in IGBT structures when the temperature increases in connection with the device technology. The evaluation of the stored charge vs. temperature is important in order to quantify turnoff losses due to current tail, and to avoid thermal instability of the device in its application. Also summarized are the two kinds of electrical temperature sensitiveness in connection with the IGBT technology.

Original languageEnglish
Pages (from-to)29-34
Number of pages6
JournalIEE Conference Publication
Volume399
Publication statusPublished - 1 Dec 1994
Externally publishedYes
EventProceedings of the 5th International Conference on Power Electronics and Variable-Speed Drives - London, UK
Duration: 26 Oct 199428 Oct 1994

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Calmon, F., Lefebvre, S., Chante, J. P., Ligot, D., & Reymond, B. (1994). Thermal behaviour of PT and NPT IGBT. IEE Conference Publication, 399, 29-34.