Thermal behaviour of PT and NPT IGBT

F. Calmon, S. Lefebvre, J. P. Chante, D. Ligot, B. Reymond

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

A thermal behaviour study of insulated gate bipolar transistors (IGBTs) is presented. Particularly studied is the stored charge variation in IGBT structures when the temperature increases in connection with the device technology. The evaluation of the stored charge vs. temperature is important in order to quantify turnoff losses due to current tail, and to avoid thermal instability of the device in its application. Also summarized are the two kinds of electrical temperature sensitiveness in connection with the IGBT technology.

Original languageEnglish
Pages (from-to)29-34
Number of pages6
JournalIEE Conference Publication
Volume399
Publication statusPublished - 1 Dec 1994
Externally publishedYes
EventProceedings of the 5th International Conference on Power Electronics and Variable-Speed Drives - London, UK
Duration: 26 Oct 199428 Oct 1994

Fingerprint

Insulated gate bipolar transistors (IGBT)
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Calmon, F., Lefebvre, S., Chante, J. P., Ligot, D., & Reymond, B. (1994). Thermal behaviour of PT and NPT IGBT. IEE Conference Publication, 399, 29-34.

Thermal behaviour of PT and NPT IGBT. / Calmon, F.; Lefebvre, S.; Chante, J. P.; Ligot, D.; Reymond, B.

In: IEE Conference Publication, Vol. 399, 01.12.1994, p. 29-34.

Research output: Contribution to journalConference article

Calmon, F, Lefebvre, S, Chante, JP, Ligot, D & Reymond, B 1994, 'Thermal behaviour of PT and NPT IGBT', IEE Conference Publication, vol. 399, pp. 29-34.
Calmon F, Lefebvre S, Chante JP, Ligot D, Reymond B. Thermal behaviour of PT and NPT IGBT. IEE Conference Publication. 1994 Dec 1;399:29-34.
Calmon, F. ; Lefebvre, S. ; Chante, J. P. ; Ligot, D. ; Reymond, B. / Thermal behaviour of PT and NPT IGBT. In: IEE Conference Publication. 1994 ; Vol. 399. pp. 29-34.
@article{5d7945706b744b82897ba50314b4b0c6,
title = "Thermal behaviour of PT and NPT IGBT",
abstract = "A thermal behaviour study of insulated gate bipolar transistors (IGBTs) is presented. Particularly studied is the stored charge variation in IGBT structures when the temperature increases in connection with the device technology. The evaluation of the stored charge vs. temperature is important in order to quantify turnoff losses due to current tail, and to avoid thermal instability of the device in its application. Also summarized are the two kinds of electrical temperature sensitiveness in connection with the IGBT technology.",
author = "F. Calmon and S. Lefebvre and Chante, {J. P.} and D. Ligot and B. Reymond",
year = "1994",
month = "12",
day = "1",
language = "English",
volume = "399",
pages = "29--34",
journal = "IEE Conference Publication",
issn = "0537-9989",
publisher = "Institution of Engineering and Technology",

}

TY - JOUR

T1 - Thermal behaviour of PT and NPT IGBT

AU - Calmon, F.

AU - Lefebvre, S.

AU - Chante, J. P.

AU - Ligot, D.

AU - Reymond, B.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - A thermal behaviour study of insulated gate bipolar transistors (IGBTs) is presented. Particularly studied is the stored charge variation in IGBT structures when the temperature increases in connection with the device technology. The evaluation of the stored charge vs. temperature is important in order to quantify turnoff losses due to current tail, and to avoid thermal instability of the device in its application. Also summarized are the two kinds of electrical temperature sensitiveness in connection with the IGBT technology.

AB - A thermal behaviour study of insulated gate bipolar transistors (IGBTs) is presented. Particularly studied is the stored charge variation in IGBT structures when the temperature increases in connection with the device technology. The evaluation of the stored charge vs. temperature is important in order to quantify turnoff losses due to current tail, and to avoid thermal instability of the device in its application. Also summarized are the two kinds of electrical temperature sensitiveness in connection with the IGBT technology.

UR - http://www.scopus.com/inward/record.url?scp=0028730003&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028730003&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028730003

VL - 399

SP - 29

EP - 34

JO - IEE Conference Publication

JF - IEE Conference Publication

SN - 0537-9989

ER -