Thermal annealing of sputtered Al-Si-Cu-N films

H. Zeman, J. Musil, J. Vlček, P. H. Mayrhofer, C. Mitterer

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This article reports on stress, structure and thermal stability of Al-Si-Cu-N films prepared by DC reactive magnetron sputtering. The films were deposited under the following conditions: discharge current Id=1A, substrate bias Us=-100V, substrate ion current density is=0.6 and 0.9mA/cm2, substrate temperature Ts=300°C and 500°C, substrate-to-target distance ds-t=60mm, partial pressure of nitrogen pN2 ranging from 0.06 to 0.14Pa and constant total pressure pT=pAr+pN2=0.5Pa. It was found that [1] the macrostress σ increases with increasing pN2 and [2] the films sputtered at very low values of pN2 (i) are polycrystalline films consisting of Al and small amounts of Al2Cu, (ii) are in tension and (iii) have a mat appearance due to a rough surface. According to the changes in structure during annealing up to 700°C, the Al-Si-Cu-N films can be divided into two groups: (a) metastable films which are characterized by a crystalline structure and (b) stable films which exhibit an X-ray amorphous structure. The metastable films change their structure upon thermal annealing. On the contrary, the stable films remain amorphous even after annealing at Ta=700°C for 30min. The stable films contain a high (approx. 8at%) amount of copper and exhibit the lowest thermal expansion coefficient αc≈4.2×10-6K-1 compared to the metastable films with αc≈10-12×10-6K-1. The experiments described in this paper show that the thermal expansion coefficient of the films strongly depends on their structure.

Original languageEnglish
Pages (from-to)21-28
Number of pages8
JournalUser Modeling and User-Adapted Interaction
Volume72
Issue number1
DOIs
Publication statusPublished - 12 Sep 2003

Fingerprint

Annealing
annealing
Substrates
Thermal expansion
Hot Temperature
thermal expansion
Reactive sputtering
Amorphous films
coefficients
Partial pressure
Magnetron sputtering
Copper
ion currents
partial pressure
Thermodynamic stability
Current density
Nitrogen
magnetron sputtering
thermal stability
Ions

Keywords

  • Al-Si-Cu-N films
  • Macrostress σ
  • Magnetron sputtering
  • Structure
  • Thermal stability

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Thermal annealing of sputtered Al-Si-Cu-N films. / Zeman, H.; Musil, J.; Vlček, J.; Mayrhofer, P. H.; Mitterer, C.

In: User Modeling and User-Adapted Interaction, Vol. 72, No. 1, 12.09.2003, p. 21-28.

Research output: Contribution to journalArticle

Zeman, H. ; Musil, J. ; Vlček, J. ; Mayrhofer, P. H. ; Mitterer, C. / Thermal annealing of sputtered Al-Si-Cu-N films. In: User Modeling and User-Adapted Interaction. 2003 ; Vol. 72, No. 1. pp. 21-28.
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