THERMAL ANNEALING OF DEFECTS IN GALLIUM ARSENIDE IRRADIATED WITH SULFUR IONS.

V. M. Ardyshev, A. A. Verigin, Yu Yu Kryuchkov, A. P. Mamontov, I. P. Chernov

Research output: Contribution to journalArticle

Abstract

An investigation was made of the kinetics of annealing of disordered regions created in GaAs by irradiation with 100 and 175 keV sulfur ions in doses of D//1 equals 2. 5 multiplied by 10**1**0 and D//2 equals 1 multiplied by 10**1**5 cm** minus **2. The kinetics of annealing of disordered regions occurred in two stages in the temperature range 300-378 K. In the first stage (T approximately equals 523 K, gamma equals 1) the annealing healed point defects, whereas during the second stage (T approximately equals 748 K, gamma equals 1), it affected defect complexes. When disordered regions overlapped, then 'reverse' annealing of the resistivity was observed during the first stage.

Original languageEnglish
Pages (from-to)196-198
Number of pages3
JournalSoviet physics. Semiconductors
Volume18
Issue number2
Publication statusPublished - Feb 1984

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Gallium arsenide
Sulfur
Annealing
Defects
Ions
Kinetics
Point defects
Irradiation
Hot Temperature
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

THERMAL ANNEALING OF DEFECTS IN GALLIUM ARSENIDE IRRADIATED WITH SULFUR IONS. / Ardyshev, V. M.; Verigin, A. A.; Kryuchkov, Yu Yu; Mamontov, A. P.; Chernov, I. P.

In: Soviet physics. Semiconductors, Vol. 18, No. 2, 02.1984, p. 196-198.

Research output: Contribution to journalArticle

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