Abstract
An investigation was made of the kinetics of annealing of disordered regions created in GaAs by irradiation with 100 and 175 keV sulfur ions in doses of D//1 equals 2. 5 multiplied by 10**1**0 and D//2 equals 1 multiplied by 10**1**5 cm** minus **2. The kinetics of annealing of disordered regions occurred in two stages in the temperature range 300-378 K. In the first stage (T approximately equals 523 K, gamma equals 1) the annealing healed point defects, whereas during the second stage (T approximately equals 748 K, gamma equals 1), it affected defect complexes. When disordered regions overlapped, then 'reverse' annealing of the resistivity was observed during the first stage.
| Original language | English |
|---|---|
| Pages (from-to) | 196-198 |
| Number of pages | 3 |
| Journal | Soviet physics. Semiconductors |
| Volume | 18 |
| Issue number | 2 |
| Publication status | Published - Feb 1984 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
THERMAL ANNEALING OF DEFECTS IN GALLIUM ARSENIDE IRRADIATED WITH SULFUR IONS. / Ardyshev, V. M.; Verigin, A. A.; Kryuchkov, Yu Yu; Mamontov, A. P.; Chernov, I. P.
In: Soviet physics. Semiconductors, Vol. 18, No. 2, 02.1984, p. 196-198.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - THERMAL ANNEALING OF DEFECTS IN GALLIUM ARSENIDE IRRADIATED WITH SULFUR IONS.
AU - Ardyshev, V. M.
AU - Verigin, A. A.
AU - Kryuchkov, Yu Yu
AU - Mamontov, A. P.
AU - Chernov, I. P.
PY - 1984/2
Y1 - 1984/2
N2 - An investigation was made of the kinetics of annealing of disordered regions created in GaAs by irradiation with 100 and 175 keV sulfur ions in doses of D//1 equals 2. 5 multiplied by 10**1**0 and D//2 equals 1 multiplied by 10**1**5 cm** minus **2. The kinetics of annealing of disordered regions occurred in two stages in the temperature range 300-378 K. In the first stage (T approximately equals 523 K, gamma equals 1) the annealing healed point defects, whereas during the second stage (T approximately equals 748 K, gamma equals 1), it affected defect complexes. When disordered regions overlapped, then 'reverse' annealing of the resistivity was observed during the first stage.
AB - An investigation was made of the kinetics of annealing of disordered regions created in GaAs by irradiation with 100 and 175 keV sulfur ions in doses of D//1 equals 2. 5 multiplied by 10**1**0 and D//2 equals 1 multiplied by 10**1**5 cm** minus **2. The kinetics of annealing of disordered regions occurred in two stages in the temperature range 300-378 K. In the first stage (T approximately equals 523 K, gamma equals 1) the annealing healed point defects, whereas during the second stage (T approximately equals 748 K, gamma equals 1), it affected defect complexes. When disordered regions overlapped, then 'reverse' annealing of the resistivity was observed during the first stage.
UR - http://www.scopus.com/inward/record.url?scp=0021376791&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0021376791&partnerID=8YFLogxK
M3 - Article
VL - 18
SP - 196
EP - 198
JO - Soviet physics. Semiconductors
JF - Soviet physics. Semiconductors
SN - 0038-5700
IS - 2
ER -