Thermal analysis of high power IGBT modules

Z. Khatir, S. Lefebvre

Research output: Contribution to conferencePaper

8 Citations (Scopus)

Abstract

The technology of high power IGBT modules has been improved significantly these last years against thermal fatigue and the first weaknesses related to the bonding die attach have been well enough corrected. Nowadays, the most frequently observed failure mode is the solder layer cracks between copper base plate material and the ceramic. Experimental tests must be completed by numerical simulation tools in order to analyze this type of failure related to power cycling constraints. Thermal simulations of high power IGBT modules based on boundary element method are described in this paper. A validation of the numerical tool is shown in steady-state and dynamic operations during a power cycle by comparison with experimental measurements. Finally, using the software, a model of solder layer cracks between copper base plate and the DCB ceramic is applied in order to investigate its effect on the thermal constraints.

Original languageEnglish
Pages271-274
Number of pages4
Publication statusPublished - 1 Dec 2000
Externally publishedYes
Event12th International Symposium on Power Semiconductor Devices and ICs - Toulouse, France
Duration: 22 May 200025 May 2000

Conference

Conference12th International Symposium on Power Semiconductor Devices and ICs
CountryFrance
CityToulouse
Period22.5.0025.5.00

Fingerprint

Insulated gate bipolar transistors (IGBT)
Soldering alloys
Thermoanalysis
Cracks
Copper
Thermal fatigue
Boundary element method
Failure modes
Computer simulation
Hot Temperature

Keywords

  • Boundary element method
  • IGBT modules
  • Power cycling
  • Thermal analysis
  • Thermal modeling
  • Thermal resistance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Khatir, Z., & Lefebvre, S. (2000). Thermal analysis of high power IGBT modules. 271-274. Paper presented at 12th International Symposium on Power Semiconductor Devices and ICs, Toulouse, France.

Thermal analysis of high power IGBT modules. / Khatir, Z.; Lefebvre, S.

2000. 271-274 Paper presented at 12th International Symposium on Power Semiconductor Devices and ICs, Toulouse, France.

Research output: Contribution to conferencePaper

Khatir, Z & Lefebvre, S 2000, 'Thermal analysis of high power IGBT modules' Paper presented at 12th International Symposium on Power Semiconductor Devices and ICs, Toulouse, France, 22.5.00 - 25.5.00, pp. 271-274.
Khatir Z, Lefebvre S. Thermal analysis of high power IGBT modules. 2000. Paper presented at 12th International Symposium on Power Semiconductor Devices and ICs, Toulouse, France.
Khatir, Z. ; Lefebvre, S. / Thermal analysis of high power IGBT modules. Paper presented at 12th International Symposium on Power Semiconductor Devices and ICs, Toulouse, France.4 p.
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