The structure and degradation mechanism of ferroelectric SrBi2Ta2O9 thin films

Hong Keun Kim, Song Hun Kim, Sang Bo Bae, Ill Won Kim, V. F. Pichugin, T. S. Frangulian, V. F. Stoliarenko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ferroelectric bismuth layer oxide SrBi2Ta2O9 (SBT) thin films were prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique. The films were deposited at the substrate temperature of 540°C and annealed at 800°C for 1 hr in oxygen ambient. The composition of mixed powder was Sr0.8Bi2.4Ta2.0O9, but the film annealed 800°C display Sr0.7Bi2.4Ta2.0O9 measured by electron probe micro analyzer (EPMA). The crystalline fluorite phase was maintain in the annealing temperature from 540 to 750°C and SBT phase appeared at 750°C, crystallized at 800°C, which was observed in the X-ray diffraction patterns and scanning electron microscopy images. The grains, which were spherical-like, increased from about 50 to 250 nm in diameter with increasing annealing temperature from 540°C to 800°C. The SBT film annealed at 800°C showed 2Pr=12.6μ C/cm2, 2Ec=125 kV/cm at applied voltage of 5 V, and the hysteresis loops became saturated at 2 V. The fatigue characteristics of SBT thin films with various applied voltage and frequency have also been investigated. It revealed that the polarization fatigue occurred with decreasing switching voltage and frequency. This significant polarization fatigue was originated due to partial switching when the switching voltage was lower than saturation voltage (∼3 V). The signal/noise ratio had maximum value of 5 at 3 V, which was capable of low-voltage operation in NVFRAM device.

Original languageEnglish
Title of host publicationProceedings - KORUS 2000: 4th Korea-Russia International Symposium on Science and Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages69-77
Number of pages9
Volume1
ISBN (Print)0780364864, 9780780364868
DOIs
Publication statusPublished - 2000
Event4th Korea-Russia International Symposium on Science and Technology, KORUS 2000 - Ulsan, Korea, Republic of
Duration: 27 Jun 20001 Jul 2000

Other

Other4th Korea-Russia International Symposium on Science and Technology, KORUS 2000
CountryKorea, Republic of
CityUlsan
Period27.6.001.7.00

Keywords

  • Degradation
  • Fatigue
  • SBT
  • SrBiTaO

ASJC Scopus subject areas

  • Clinical Biochemistry
  • Computer Networks and Communications
  • Biotechnology
  • Civil and Structural Engineering
  • Mechanics of Materials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films

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  • Cite this

    Kim, H. K., Kim, S. H., Bae, S. B., Kim, I. W., Pichugin, V. F., Frangulian, T. S., & Stoliarenko, V. F. (2000). The structure and degradation mechanism of ferroelectric SrBi2Ta2O9 thin films. In Proceedings - KORUS 2000: 4th Korea-Russia International Symposium on Science and Technology (Vol. 1, pp. 69-77). [865925] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/KORUS.2000.865925