The regularities of radiation defect formation at the interface metal - N-InP

E. G. Soboleva, V. V. Litvinenko, T. B. Kit

Division for Technosphere Safety

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics.

Original language	English
Title of host publication	2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467383837
DOIs	https://doi.org/10.1109/SIBCON.2016.7491677
Publication status	Published - 14 Jun 2016
Event	2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Moscow, Russian Federation Duration: 12 May 2016 → 14 May 2016

Conference

Conference	2016 International Siberian Conference on Control and Communications, SIBCON 2016
Country	Russian Federation
City	Moscow
Period	12.5.16 → 14.5.16

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Keywords

DLTS spectr
InP
radiation defect
Schottky barrier

ASJC Scopus subject areas

Signal Processing
Control and Systems Engineering
Electrical and Electronic Engineering
Modelling and Simulation
Computer Networks and Communications

Cite this

Soboleva, E. G., Litvinenko, V. V., & Kit, T. B. (2016). The regularities of radiation defect formation at the interface metal - N-InP. In 2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings [7491677] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2016.7491677

The regularities of radiation defect formation at the interface metal - N-InP. / Soboleva, E. G.; Litvinenko, V. V.; Kit, T. B.

2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. 7491677.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Soboleva, EG, Litvinenko, VV & Kit, TB 2016, The regularities of radiation defect formation at the interface metal - N-InP. in 2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings., 7491677, Institute of Electrical and Electronics Engineers Inc., 2016 International Siberian Conference on Control and Communications, SIBCON 2016, Moscow, Russian Federation, 12.5.16. https://doi.org/10.1109/SIBCON.2016.7491677

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Access to Document

10.1109/SIBCON.2016.7491677