Abstract
New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics.
| Original language | English |
|---|---|
| Title of host publication | 2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781467383837 |
| DOIs | |
| Publication status | Published - 14 Jun 2016 |
| Event | 2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Moscow, Russian Federation Duration: 12 May 2016 → 14 May 2016 |
Conference
| Conference | 2016 International Siberian Conference on Control and Communications, SIBCON 2016 |
|---|---|
| Country | Russian Federation |
| City | Moscow |
| Period | 12.5.16 → 14.5.16 |
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Keywords
- DLTS spectr
- InP
- radiation defect
- Schottky barrier
ASJC Scopus subject areas
- Signal Processing
- Control and Systems Engineering
- Electrical and Electronic Engineering
- Modelling and Simulation
- Computer Networks and Communications
Cite this
The regularities of radiation defect formation at the interface metal - N-InP. / Soboleva, E. G.; Litvinenko, V. V.; Kit, T. B.
2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. 7491677.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - The regularities of radiation defect formation at the interface metal - N-InP
AU - Soboleva, E. G.
AU - Litvinenko, V. V.
AU - Kit, T. B.
PY - 2016/6/14
Y1 - 2016/6/14
N2 - New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics.
AB - New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics.
KW - DLTS spectr
KW - InP
KW - radiation defect
KW - Schottky barrier
UR - http://www.scopus.com/inward/record.url?scp=84978149838&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84978149838&partnerID=8YFLogxK
U2 - 10.1109/SIBCON.2016.7491677
DO - 10.1109/SIBCON.2016.7491677
M3 - Conference contribution
AN - SCOPUS:84978149838
BT - 2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -