Abstract
New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics.
| Original language | English |
|---|---|
| Title of host publication | 2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781467383837 |
| DOIs | |
| Publication status | Published - 14 Jun 2016 |
| Event | 2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Moscow, Russian Federation Duration: 12 May 2016 → 14 May 2016 |
Conference
| Conference | 2016 International Siberian Conference on Control and Communications, SIBCON 2016 |
|---|---|
| Country | Russian Federation |
| City | Moscow |
| Period | 12.5.16 → 14.5.16 |
Keywords
- DLTS spectr
- InP
- radiation defect
- Schottky barrier
ASJC Scopus subject areas
- Signal Processing
- Control and Systems Engineering
- Electrical and Electronic Engineering
- Modelling and Simulation
- Computer Networks and Communications
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Soboleva, E. G., Litvinenko, V. V., & Kit, T. B. (2016). The regularities of radiation defect formation at the interface metal - N-InP. In 2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings [7491677] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2016.7491677