The regularities of radiation defect formation at the interface metal - N-InP

E. G. Soboleva, V. V. Litvinenko, T. B. Kit

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics.

Original languageEnglish
Title of host publication2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467383837
DOIs
Publication statusPublished - 14 Jun 2016
Event2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Moscow, Russian Federation
Duration: 12 May 201614 May 2016

Conference

Conference2016 International Siberian Conference on Control and Communications, SIBCON 2016
CountryRussian Federation
CityMoscow
Period12.5.1614.5.16

Keywords

  • DLTS spectr
  • InP
  • radiation defect
  • Schottky barrier

ASJC Scopus subject areas

  • Signal Processing
  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Modelling and Simulation
  • Computer Networks and Communications

Fingerprint Dive into the research topics of 'The regularities of radiation defect formation at the interface metal - N-InP'. Together they form a unique fingerprint.

  • Cite this

    Soboleva, E. G., Litvinenko, V. V., & Kit, T. B. (2016). The regularities of radiation defect formation at the interface metal - N-InP. In 2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings [7491677] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2016.7491677