The reactive deposition of TiO<sub>x</sub> thin films

Abstract

The article reports on the aspects of reactive deposition ultra-thin TiO_x films (50 nm) by means of dual magnetron system with mirror and closed magnetic field (B field) configurations. The hysteresis effect of electrical discharge characteristics and oxygen partial pressure P(O₂) are presented. The dual magnetron with closed B field configuration has less hysteresis peculiarities and transits back to metallic deposition mode at higher O₂ flow rate (Q). The deposition rates don’t depend on B field configuration and correlate with changing of P(O₂) and discharge voltage. The refractive spectra and energy of band gap, which are measured by UV-visible spectrophotometry and ellipsometry (λ=632.8 nm) methods, have strong dependence on Q(O₂).

Original language	English
Title of host publication	Advanced Materials Research
Publisher	Trans Tech Publications Ltd
Pages	748-752
Number of pages	5
Volume	1040
ISBN (Print)	9783038352648
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.1040.748
Publication status	Published - 2014
Event	International Conference for Young Scientists “High Technology: Research and Applications 2014”, HTRA 2014 - Tomsk, Russian Federation Duration: 26 Mar 2014 → 28 Mar 2014

Publication series

Name	Advanced Materials Research
Volume	1040
ISSN (Print)	10226680
ISSN (Electronic)	16628985

Other

Other	International Conference for Young Scientists “High Technology: Research and Applications 2014”, HTRA 2014
Country	Russian Federation
City	Tomsk
Period	26.3.14 → 28.3.14

Keywords

Dual magnetron
Reactive sputtering
TiO thin films

ASJC Scopus subject areas

Engineering(all)

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Sidelev, DV & Yurjev, YN 2014, The reactive deposition of TiO_x thin films. in Advanced Materials Research. vol. 1040, Advanced Materials Research, vol. 1040, Trans Tech Publications Ltd, pp. 748-752, International Conference for Young Scientists “High Technology: Research and Applications 2014”, HTRA 2014, Tomsk, Russian Federation, 26.3.14. https://doi.org/10.4028/www.scientific.net/AMR.1040.748

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