The morphology of high-current electron-beam-initiated fractures in InGaN/GaN heterostructures

V. I. Oleshko, S. G. Gorina

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The morphology of fractures in InGaN/GaN heterostructures on sapphire substrates under multipulse irradiation by a high-current electron beam is experimentally investigated. It is established that excitation of samples by an electron beam with the threshold density from the heterostructure side leads to the formation of microfractures the number, size, and shape of which change during irradiation and are determined by individual properties of investigated samples. In heterostructures with stimulated luminescence, at the instant of the excitation pulse, bright microregions were detected against a background of homogeneous cathodoluminescence. The spatial positions of these microregions coincide with those of residual microfractures. Possible mechanisms of the electron-beam-initiated fracture of light-emitting heterostructures are analyzed.

Original languageEnglish
Pages (from-to)750-752
Number of pages3
JournalTechnical Physics Letters
Volume41
Issue number8
DOIs
Publication statusPublished - 4 Aug 2015

Fingerprint

high current
electron beams
irradiation
cathodoluminescence
excitation
sapphire
luminescence
thresholds
pulses

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

The morphology of high-current electron-beam-initiated fractures in InGaN/GaN heterostructures. / Oleshko, V. I.; Gorina, S. G.

In: Technical Physics Letters, Vol. 41, No. 8, 04.08.2015, p. 750-752.

Research output: Contribution to journalArticle

@article{252a4afc3c774dae95c18d7557987b0c,
title = "The morphology of high-current electron-beam-initiated fractures in InGaN/GaN heterostructures",
abstract = "The morphology of fractures in InGaN/GaN heterostructures on sapphire substrates under multipulse irradiation by a high-current electron beam is experimentally investigated. It is established that excitation of samples by an electron beam with the threshold density from the heterostructure side leads to the formation of microfractures the number, size, and shape of which change during irradiation and are determined by individual properties of investigated samples. In heterostructures with stimulated luminescence, at the instant of the excitation pulse, bright microregions were detected against a background of homogeneous cathodoluminescence. The spatial positions of these microregions coincide with those of residual microfractures. Possible mechanisms of the electron-beam-initiated fracture of light-emitting heterostructures are analyzed.",
author = "Oleshko, {V. I.} and Gorina, {S. G.}",
year = "2015",
month = "8",
day = "4",
doi = "10.1134/S1063785015080143",
language = "English",
volume = "41",
pages = "750--752",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "8",

}

TY - JOUR

T1 - The morphology of high-current electron-beam-initiated fractures in InGaN/GaN heterostructures

AU - Oleshko, V. I.

AU - Gorina, S. G.

PY - 2015/8/4

Y1 - 2015/8/4

N2 - The morphology of fractures in InGaN/GaN heterostructures on sapphire substrates under multipulse irradiation by a high-current electron beam is experimentally investigated. It is established that excitation of samples by an electron beam with the threshold density from the heterostructure side leads to the formation of microfractures the number, size, and shape of which change during irradiation and are determined by individual properties of investigated samples. In heterostructures with stimulated luminescence, at the instant of the excitation pulse, bright microregions were detected against a background of homogeneous cathodoluminescence. The spatial positions of these microregions coincide with those of residual microfractures. Possible mechanisms of the electron-beam-initiated fracture of light-emitting heterostructures are analyzed.

AB - The morphology of fractures in InGaN/GaN heterostructures on sapphire substrates under multipulse irradiation by a high-current electron beam is experimentally investigated. It is established that excitation of samples by an electron beam with the threshold density from the heterostructure side leads to the formation of microfractures the number, size, and shape of which change during irradiation and are determined by individual properties of investigated samples. In heterostructures with stimulated luminescence, at the instant of the excitation pulse, bright microregions were detected against a background of homogeneous cathodoluminescence. The spatial positions of these microregions coincide with those of residual microfractures. Possible mechanisms of the electron-beam-initiated fracture of light-emitting heterostructures are analyzed.

UR - http://www.scopus.com/inward/record.url?scp=84940660924&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940660924&partnerID=8YFLogxK

U2 - 10.1134/S1063785015080143

DO - 10.1134/S1063785015080143

M3 - Article

AN - SCOPUS:84940660924

VL - 41

SP - 750

EP - 752

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 8

ER -