The morphology of high-current electron-beam-initiated fractures in InGaN/GaN heterostructures

V. I. Oleshko, S. G. Gorina

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The morphology of fractures in InGaN/GaN heterostructures on sapphire substrates under multipulse irradiation by a high-current electron beam is experimentally investigated. It is established that excitation of samples by an electron beam with the threshold density from the heterostructure side leads to the formation of microfractures the number, size, and shape of which change during irradiation and are determined by individual properties of investigated samples. In heterostructures with stimulated luminescence, at the instant of the excitation pulse, bright microregions were detected against a background of homogeneous cathodoluminescence. The spatial positions of these microregions coincide with those of residual microfractures. Possible mechanisms of the electron-beam-initiated fracture of light-emitting heterostructures are analyzed.

Original languageEnglish
Pages (from-to)750-752
Number of pages3
JournalTechnical Physics Letters
Issue number8
Publication statusPublished - 4 Aug 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'The morphology of high-current electron-beam-initiated fractures in InGaN/GaN heterostructures'. Together they form a unique fingerprint.

Cite this