The Interface Influence in TiN/SiNx Multilayer Nanocomposite Under Irradiation

V. V. Uglov, I. V. Safronov, N. T. Kvasov, G. E. Remnev, V. I. Shimanski

Research output: Contribution to journalArticle

Abstract

The paper focuses on studying the kinetics of radiation-induced point defects formed in TiN/SiNx multilayer nanocomposites with account of their generation, diffusion recombination, and the influence of sinks functioning as interfaces. In order to describe the kinetics in nanocrystalline TiN and amorphous SiNx phases, a finite-difference method is used to solve the system of balance kinetic equations for absolute defect concentrations depending on the spatiotemporal variables. A model of the disclination-dislocation interface structure is used to study the absorption of radiation-induced point defects on the boundaries in created stress fields. It is shown that the interface effectively absorbs point defects in these phases of TiN/SiNx multilayer nanocomposite, thereby reducing their amount within the space between phases. This behavior of point defects partially explains a mechanism of the radiation resistance in this type of nanocomposites.

Original languageEnglish
Pages (from-to)1600-1610
Number of pages11
JournalRussian Physics Journal
Volume60
Issue number9
DOIs
Publication statusPublished - 1 Jan 2018

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Keywords

  • amorphous and crystalline composites
  • disclination
  • interface
  • point defect kinetics
  • stress field
  • TiN/SiN multilayer nanocomposites

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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