The influence of vacancy generation at the initial stage of ion implantation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The paper presents a coupled isothermal model at the initial stage of a solid surface treatment with particle beams. Mechanical stresses arising due to the interaction of particles with the surface affect the redistribution of the implanted impurity. Vacancies in the metal surface and their generation under stress are also taken into account. The kinetic law is formulated on the basis of thermodynamics of irreversible processes. The authors used numerical investigation methods. As a result, they have obtained the distributions of impurity concentration and deformations for various time moments. The authors also compare the concentration and deformation profiles with and without vacancies and study the influences of some model parameters. The effect of vacancy generation on the diffusion has been established to lead to an increase in the depth of penetration, as well as in the concentration of impurities.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
PublisherAmerican Institute of Physics Inc.
Pages479-482
Number of pages4
Volume1623
ISBN (Print)9780735412606
DOIs
Publication statusPublished - 2014
EventInternational Conference on Physical Mesomechanics of Multilevel Systems 2014 - Tomsk, Russian Federation
Duration: 3 Sep 20145 Sep 2014

Other

OtherInternational Conference on Physical Mesomechanics of Multilevel Systems 2014
CountryRussian Federation
CityTomsk
Period3.9.145.9.14

Fingerprint

ion implantation
impurities
irreversible processes
particle beams
surface treatment
solid surfaces
metal surfaces
penetration
moments
thermodynamics
kinetics
profiles
interactions

Keywords

  • Coupled isothermal model
  • Difference scheme
  • Diffusion
  • Ion implantation
  • Mechanical stresses
  • Vacancy generation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Parfenova, E. S., & Knyazeva, A. G. (2014). The influence of vacancy generation at the initial stage of ion implantation. In AIP Conference Proceedings (Vol. 1623, pp. 479-482). American Institute of Physics Inc.. https://doi.org/10.1063/1.4901496

The influence of vacancy generation at the initial stage of ion implantation. / Parfenova, Elena Sergeevna; Knyazeva, Anna G.

AIP Conference Proceedings. Vol. 1623 American Institute of Physics Inc., 2014. p. 479-482.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Parfenova, ES & Knyazeva, AG 2014, The influence of vacancy generation at the initial stage of ion implantation. in AIP Conference Proceedings. vol. 1623, American Institute of Physics Inc., pp. 479-482, International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russian Federation, 3.9.14. https://doi.org/10.1063/1.4901496
Parfenova ES, Knyazeva AG. The influence of vacancy generation at the initial stage of ion implantation. In AIP Conference Proceedings. Vol. 1623. American Institute of Physics Inc. 2014. p. 479-482 https://doi.org/10.1063/1.4901496
Parfenova, Elena Sergeevna ; Knyazeva, Anna G. / The influence of vacancy generation at the initial stage of ion implantation. AIP Conference Proceedings. Vol. 1623 American Institute of Physics Inc., 2014. pp. 479-482
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