Abstract
The influence of thermal treatment and pressure of air on the parameters of radiation-induced defects in boron nitride modified by ions has been investigated using methods of thermo-activated and optical spectroscopy. The influence of the adsorption of oxygen on the type of dominating charge carriers, position of the Fermi level and character of optical, field and thermo-activated electron transitions has been found. The influence of electron transitions with the participation of the levels of the radiation-induced defects and complexes based on oxygen and the defects on the properties of the material has been determined in the framework of electronic models of the forbidden band.
| Original language | English |
|---|---|
| Pages (from-to) | 723-729 |
| Number of pages | 7 |
| Journal | Surface Investigation X-Ray, Synchrotron and Neutron Techniques |
| Volume | 16 |
| Issue number | 5 |
| Publication status | Published - 2001 |
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ASJC Scopus subject areas
- Surfaces and Interfaces
Cite this
Kabyshev, A. V., Konusov, F. V., & Lopatin, V. V. (2001). The influence of air on the characteristics of the trapping and recombination centers of boron nitride irradiated with ions. Surface Investigation X-Ray, Synchrotron and Neutron Techniques, 16(5), 723-729.