Abstract
The influence of thermal treatment and pressure of air on the parameters of radiation-induced defects in boron nitride modified by ions has been investigated using methods of thermo-activated and optical spectroscopy. The influence of the adsorption of oxygen on the type of dominating charge carriers, position of the Fermi level and character of optical, field and thermo-activated electron transitions has been found. The influence of electron transitions with the participation of the levels of the radiation-induced defects and complexes based on oxygen and the defects on the properties of the material has been determined in the framework of electronic models of the forbidden band.
| Original language | English |
|---|---|
| Pages (from-to) | 723-729 |
| Number of pages | 7 |
| Journal | Surface Investigation X-Ray, Synchrotron and Neutron Techniques |
| Volume | 16 |
| Issue number | 5 |
| Publication status | Published - 2001 |
ASJC Scopus subject areas
- Surfaces and Interfaces
Fingerprint Dive into the research topics of 'The influence of air on the characteristics of the trapping and recombination centers of boron nitride irradiated with ions'. Together they form a unique fingerprint.
Cite this
Kabyshev, A. V., Konusov, F. V., & Lopatin, V. V. (2001). The influence of air on the characteristics of the trapping and recombination centers of boron nitride irradiated with ions. Surface Investigation X-Ray, Synchrotron and Neutron Techniques, 16(5), 723-729.