The influence of air on the characteristics of the trapping and recombination centers of boron nitride irradiated with ions

A. V. Kabyshev, F. V. Konusov, V. V. Lopatin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The influence of thermal treatment and pressure of air on the parameters of radiation-induced defects in boron nitride modified by ions has been investigated using methods of thermo-activated and optical spectroscopy. The influence of the adsorption of oxygen on the type of dominating charge carriers, position of the Fermi level and character of optical, field and thermo-activated electron transitions has been found. The influence of electron transitions with the participation of the levels of the radiation-induced defects and complexes based on oxygen and the defects on the properties of the material has been determined in the framework of electronic models of the forbidden band.

Original languageEnglish
Pages (from-to)723-729
Number of pages7
JournalSurface Investigation X-Ray, Synchrotron and Neutron Techniques
Volume16
Issue number5
Publication statusPublished - 2001

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Boron nitride
boron nitrides
electron transitions
trapping
Ions
Electron transitions
Defects
air
defects
Air
Oxygen
Radiation
forbidden bands
ions
oxygen
radiation
Fermi level
Charge carriers
charge carriers
Heat treatment

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

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AU - Konusov, F. V.

AU - Lopatin, V. V.

PY - 2001

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AB - The influence of thermal treatment and pressure of air on the parameters of radiation-induced defects in boron nitride modified by ions has been investigated using methods of thermo-activated and optical spectroscopy. The influence of the adsorption of oxygen on the type of dominating charge carriers, position of the Fermi level and character of optical, field and thermo-activated electron transitions has been found. The influence of electron transitions with the participation of the levels of the radiation-induced defects and complexes based on oxygen and the defects on the properties of the material has been determined in the framework of electronic models of the forbidden band.

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