The impact of the plasma volume discharge in the atmospheric-pressure air on the distribution of the surface potential in a V-defect region of epitaxial HgCdTe films

D. V. Grigoryev, V. A. Novikov, D. A. Bezrodnyy, V. F. Tarasenko, M. A. Shulepov

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Abstract

In the present report we demonstrate the experimental data obtained as a result of studying the impact of nanosecond plasma volume discharge in the atmospheric-pressure air on the distribution of the surface potential in the V-defect regions of epitaxial HgCdTe films. The experimental data obtained for the variation of the contact potential difference (ΔCPD) between the V-defect and the main matrix of the epitaxial film show that the mean value of ΔCPD for the original surface differs from the one for the irradiated surface for 55 eV. At the same time the mean value of ΔCPD changes its sign indicating that the original surface of the epitaxial HgCdTe film predominantly contains the grains with increased cadmium content while after the irradiation the grains possess an increased content of mercury. Therefore, during the irradiation process a decrease of the mercury content in the near-surface region of the semiconductor takes place resulting in the alteration of the electrophysical properties in the film's near-surface region.

Original languageEnglish
Article number012026
JournalJournal of Physics: Conference Series
Volume652
Issue number1
DOIs
Publication statusPublished - 5 Nov 2015
Externally publishedYes

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atmospheric pressure
contact potentials
air
defects
irradiation
cadmium
matrices

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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title = "The impact of the plasma volume discharge in the atmospheric-pressure air on the distribution of the surface potential in a V-defect region of epitaxial HgCdTe films",
abstract = "In the present report we demonstrate the experimental data obtained as a result of studying the impact of nanosecond plasma volume discharge in the atmospheric-pressure air on the distribution of the surface potential in the V-defect regions of epitaxial HgCdTe films. The experimental data obtained for the variation of the contact potential difference (ΔCPD) between the V-defect and the main matrix of the epitaxial film show that the mean value of ΔCPD for the original surface differs from the one for the irradiated surface for 55 eV. At the same time the mean value of ΔCPD changes its sign indicating that the original surface of the epitaxial HgCdTe film predominantly contains the grains with increased cadmium content while after the irradiation the grains possess an increased content of mercury. Therefore, during the irradiation process a decrease of the mercury content in the near-surface region of the semiconductor takes place resulting in the alteration of the electrophysical properties in the film's near-surface region.",
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T1 - The impact of the plasma volume discharge in the atmospheric-pressure air on the distribution of the surface potential in a V-defect region of epitaxial HgCdTe films

AU - Grigoryev, D. V.

AU - Novikov, V. A.

AU - Bezrodnyy, D. A.

AU - Tarasenko, V. F.

AU - Shulepov, M. A.

PY - 2015/11/5

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N2 - In the present report we demonstrate the experimental data obtained as a result of studying the impact of nanosecond plasma volume discharge in the atmospheric-pressure air on the distribution of the surface potential in the V-defect regions of epitaxial HgCdTe films. The experimental data obtained for the variation of the contact potential difference (ΔCPD) between the V-defect and the main matrix of the epitaxial film show that the mean value of ΔCPD for the original surface differs from the one for the irradiated surface for 55 eV. At the same time the mean value of ΔCPD changes its sign indicating that the original surface of the epitaxial HgCdTe film predominantly contains the grains with increased cadmium content while after the irradiation the grains possess an increased content of mercury. Therefore, during the irradiation process a decrease of the mercury content in the near-surface region of the semiconductor takes place resulting in the alteration of the electrophysical properties in the film's near-surface region.

AB - In the present report we demonstrate the experimental data obtained as a result of studying the impact of nanosecond plasma volume discharge in the atmospheric-pressure air on the distribution of the surface potential in the V-defect regions of epitaxial HgCdTe films. The experimental data obtained for the variation of the contact potential difference (ΔCPD) between the V-defect and the main matrix of the epitaxial film show that the mean value of ΔCPD for the original surface differs from the one for the irradiated surface for 55 eV. At the same time the mean value of ΔCPD changes its sign indicating that the original surface of the epitaxial HgCdTe film predominantly contains the grains with increased cadmium content while after the irradiation the grains possess an increased content of mercury. Therefore, during the irradiation process a decrease of the mercury content in the near-surface region of the semiconductor takes place resulting in the alteration of the electrophysical properties in the film's near-surface region.

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