The effect of oxygen on the ZnS electronic energy-band structure

N. K. Morozova, I. A. Karetnikov, K. V. Golub, N. D. Danilevich, V. M. Lisitsyn, V. I. Oleshko

Research output: Contribution to journalArticle

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Abstract

Experimental data indicating that the band gap of Zn-O-S solid solutions decreases appreciably in accordance with the theory of noncrossing energy bands are reported for the first time. It is shown that this effect is mainly characteristic of ZnS with an excess of Zn. The concentration of dissolved oxygen [O(S)] has been determined from data taken using precision X-ray structure analysis and chemical phase analysis. The decrease in the band gap determined from the cathodoluminescence spectra is equal to 75 meV for sphalerite ZnS (s) and 90 meV for wurtzite ZnS (w) per 1 mol % and depends virtually linearly on the oxygen concentration [O(S)]. An increase in [O(S)], in addition to an intensification and shift of the free-exciton (FE) band, is also conducive to the formation of SA oxygen-containing complexes in ZnS. These complexes are responsible for emission in the visible region of the spectrum and for the band I"1 of excitons bound to these complexes. The binding energy is equal to ∼61 and ∼104 meV for ZnS (s) and ZnS (w), respectively. The band I"1 shifts as [O(S)] varies, similarly to the shift of the FE band. The obtained dependences define the position of the FE band in oxygen-free ZnS and make it possible to assess the oxygen concentration in the compound from the shift of the FE band.

Original languageEnglish
Pages (from-to)485-490
Number of pages6
JournalSemiconductors
Volume39
Issue number5
DOIs
Publication statusPublished - 2005

Fingerprint

Excitons
Band structure
energy bands
Oxygen
oxygen
electronics
excitons
Energy gap
shift
Cathodoluminescence
Dissolved oxygen
Binding energy
Solid solutions
LDS 751
zincblende
X rays
cathodoluminescence
wurtzite
solid solutions
binding energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

The effect of oxygen on the ZnS electronic energy-band structure. / Morozova, N. K.; Karetnikov, I. A.; Golub, K. V.; Danilevich, N. D.; Lisitsyn, V. M.; Oleshko, V. I.

In: Semiconductors, Vol. 39, No. 5, 2005, p. 485-490.

Research output: Contribution to journalArticle

Morozova, NK, Karetnikov, IA, Golub, KV, Danilevich, ND, Lisitsyn, VM & Oleshko, VI 2005, 'The effect of oxygen on the ZnS electronic energy-band structure', Semiconductors, vol. 39, no. 5, pp. 485-490. https://doi.org/10.1134/1.1923552
Morozova, N. K. ; Karetnikov, I. A. ; Golub, K. V. ; Danilevich, N. D. ; Lisitsyn, V. M. ; Oleshko, V. I. / The effect of oxygen on the ZnS electronic energy-band structure. In: Semiconductors. 2005 ; Vol. 39, No. 5. pp. 485-490.
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