The effect of internal fields on tunneling current in strained GaN/AlxGa1-xN(0001) structures

S. N. Grinyaev, A. N. Razzhuvalov

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The influence of internal fields on tunnelling current in w-GaN/AlxGa1-xN(0001 ) nitride structures with strained barrier layers is investigated by the pseudopotential and scattering-matrix methods. It is shown that, for symmetric two-barrier structures, spontaneous polarization and a piezoelectric field lead to asymmetry of the current-voltage characteristic when the direction of an external field is varied. Moreover, for asymmetric structures these phenomena cause the current to depend on the position of layers along the polar axis. In confined superlattices, internal fields form a Stark ladder of electron states, which manifests itself in current peaks for a relatively weak external field (∼10 kV/cm). Pronounced features in the tunnel current are observed for layer thicknesses which are smaller in comparison with the GaAs/AlGaAs(001) structures by a factor of approximately 2. The dependence of tunnel current on the thickness and position of the layers, temperature, and degree of doping are explained from an analysis of the Stark effect for resonance states.

Original languageEnglish
Pages (from-to)433-438
Number of pages6
JournalSemiconductors
Volume37
Issue number4
DOIs
Publication statusPublished - 1 Apr 2003
Externally publishedYes

Fingerprint

Tunnels
Stark effect
Superlattices
Ladders
Current voltage characteristics
Nitrides
Electron energy levels
Doping (additives)
Scattering
Polarization
tunnels
S matrix theory
barrier layers
electron states
ladders
matrix methods
Temperature
pseudopotentials
nitrides
aluminum gallium arsenides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

The effect of internal fields on tunneling current in strained GaN/AlxGa1-xN(0001) structures. / Grinyaev, S. N.; Razzhuvalov, A. N.

In: Semiconductors, Vol. 37, No. 4, 01.04.2003, p. 433-438.

Research output: Contribution to journalArticle

@article{eb85337a8c364013ac67d3d35d0b035b,
title = "The effect of internal fields on tunneling current in strained GaN/AlxGa1-xN(0001) structures",
abstract = "The influence of internal fields on tunnelling current in w-GaN/AlxGa1-xN(0001 ) nitride structures with strained barrier layers is investigated by the pseudopotential and scattering-matrix methods. It is shown that, for symmetric two-barrier structures, spontaneous polarization and a piezoelectric field lead to asymmetry of the current-voltage characteristic when the direction of an external field is varied. Moreover, for asymmetric structures these phenomena cause the current to depend on the position of layers along the polar axis. In confined superlattices, internal fields form a Stark ladder of electron states, which manifests itself in current peaks for a relatively weak external field (∼10 kV/cm). Pronounced features in the tunnel current are observed for layer thicknesses which are smaller in comparison with the GaAs/AlGaAs(001) structures by a factor of approximately 2. The dependence of tunnel current on the thickness and position of the layers, temperature, and degree of doping are explained from an analysis of the Stark effect for resonance states.",
author = "Grinyaev, {S. N.} and Razzhuvalov, {A. N.}",
year = "2003",
month = "4",
day = "1",
doi = "10.1134/1.1568463",
language = "English",
volume = "37",
pages = "433--438",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "4",

}

TY - JOUR

T1 - The effect of internal fields on tunneling current in strained GaN/AlxGa1-xN(0001) structures

AU - Grinyaev, S. N.

AU - Razzhuvalov, A. N.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - The influence of internal fields on tunnelling current in w-GaN/AlxGa1-xN(0001 ) nitride structures with strained barrier layers is investigated by the pseudopotential and scattering-matrix methods. It is shown that, for symmetric two-barrier structures, spontaneous polarization and a piezoelectric field lead to asymmetry of the current-voltage characteristic when the direction of an external field is varied. Moreover, for asymmetric structures these phenomena cause the current to depend on the position of layers along the polar axis. In confined superlattices, internal fields form a Stark ladder of electron states, which manifests itself in current peaks for a relatively weak external field (∼10 kV/cm). Pronounced features in the tunnel current are observed for layer thicknesses which are smaller in comparison with the GaAs/AlGaAs(001) structures by a factor of approximately 2. The dependence of tunnel current on the thickness and position of the layers, temperature, and degree of doping are explained from an analysis of the Stark effect for resonance states.

AB - The influence of internal fields on tunnelling current in w-GaN/AlxGa1-xN(0001 ) nitride structures with strained barrier layers is investigated by the pseudopotential and scattering-matrix methods. It is shown that, for symmetric two-barrier structures, spontaneous polarization and a piezoelectric field lead to asymmetry of the current-voltage characteristic when the direction of an external field is varied. Moreover, for asymmetric structures these phenomena cause the current to depend on the position of layers along the polar axis. In confined superlattices, internal fields form a Stark ladder of electron states, which manifests itself in current peaks for a relatively weak external field (∼10 kV/cm). Pronounced features in the tunnel current are observed for layer thicknesses which are smaller in comparison with the GaAs/AlGaAs(001) structures by a factor of approximately 2. The dependence of tunnel current on the thickness and position of the layers, temperature, and degree of doping are explained from an analysis of the Stark effect for resonance states.

UR - http://www.scopus.com/inward/record.url?scp=0037397890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037397890&partnerID=8YFLogxK

U2 - 10.1134/1.1568463

DO - 10.1134/1.1568463

M3 - Article

VL - 37

SP - 433

EP - 438

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -