Abstract
The influence of internal fields on tunnelling current in w-GaN/AlxGa1-xN(0001 ) nitride structures with strained barrier layers is investigated by the pseudopotential and scattering-matrix methods. It is shown that, for symmetric two-barrier structures, spontaneous polarization and a piezoelectric field lead to asymmetry of the current-voltage characteristic when the direction of an external field is varied. Moreover, for asymmetric structures these phenomena cause the current to depend on the position of layers along the polar axis. In confined superlattices, internal fields form a Stark ladder of electron states, which manifests itself in current peaks for a relatively weak external field (∼10 kV/cm). Pronounced features in the tunnel current are observed for layer thicknesses which are smaller in comparison with the GaAs/AlGaAs(001) structures by a factor of approximately 2. The dependence of tunnel current on the thickness and position of the layers, temperature, and degree of doping are explained from an analysis of the Stark effect for resonance states.
| Original language | English |
|---|---|
| Pages (from-to) | 433-438 |
| Number of pages | 6 |
| Journal | Semiconductors |
| Volume | 37 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1 Apr 2003 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
The effect of internal fields on tunneling current in strained GaN/AlxGa1-xN(0001) structures. / Grinyaev, S. N.; Razzhuvalov, A. N.
In: Semiconductors, Vol. 37, No. 4, 01.04.2003, p. 433-438.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The effect of internal fields on tunneling current in strained GaN/AlxGa1-xN(0001) structures
AU - Grinyaev, S. N.
AU - Razzhuvalov, A. N.
PY - 2003/4/1
Y1 - 2003/4/1
N2 - The influence of internal fields on tunnelling current in w-GaN/AlxGa1-xN(0001 ) nitride structures with strained barrier layers is investigated by the pseudopotential and scattering-matrix methods. It is shown that, for symmetric two-barrier structures, spontaneous polarization and a piezoelectric field lead to asymmetry of the current-voltage characteristic when the direction of an external field is varied. Moreover, for asymmetric structures these phenomena cause the current to depend on the position of layers along the polar axis. In confined superlattices, internal fields form a Stark ladder of electron states, which manifests itself in current peaks for a relatively weak external field (∼10 kV/cm). Pronounced features in the tunnel current are observed for layer thicknesses which are smaller in comparison with the GaAs/AlGaAs(001) structures by a factor of approximately 2. The dependence of tunnel current on the thickness and position of the layers, temperature, and degree of doping are explained from an analysis of the Stark effect for resonance states.
AB - The influence of internal fields on tunnelling current in w-GaN/AlxGa1-xN(0001 ) nitride structures with strained barrier layers is investigated by the pseudopotential and scattering-matrix methods. It is shown that, for symmetric two-barrier structures, spontaneous polarization and a piezoelectric field lead to asymmetry of the current-voltage characteristic when the direction of an external field is varied. Moreover, for asymmetric structures these phenomena cause the current to depend on the position of layers along the polar axis. In confined superlattices, internal fields form a Stark ladder of electron states, which manifests itself in current peaks for a relatively weak external field (∼10 kV/cm). Pronounced features in the tunnel current are observed for layer thicknesses which are smaller in comparison with the GaAs/AlGaAs(001) structures by a factor of approximately 2. The dependence of tunnel current on the thickness and position of the layers, temperature, and degree of doping are explained from an analysis of the Stark effect for resonance states.
UR - http://www.scopus.com/inward/record.url?scp=0037397890&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037397890&partnerID=8YFLogxK
U2 - 10.1134/1.1568463
DO - 10.1134/1.1568463
M3 - Article
AN - SCOPUS:0037397890
VL - 37
SP - 433
EP - 438
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 4
ER -