The effect of Al target current on the structure and properties of (Nb2Al)N films with an amorphous AlN phase

V. I. Ivashchenko, A. D. Pogrebnjak, O. V. Sobol’, V. N. Rogoz, A. A. Meilekhov, S. N. Dub, A. I. Kupchishin

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Abstract

Nanocomposite films based on (Nb2Al)N intermetallic nitride have been obtained by the method of magnetron sputtering. X-ray diffraction analysis revealed two stable states of the crystalline structure: (i) NbN with low amount (within 5 at %) of dissolved Al in a composition close to (Nb2Al)N and (ii) an amorphous component related to aluminum nitride formed by reactive magnetron sputtering. The substructural characteristics (grain size and microdeformation level) are sensitive to the current via Al target and exhibit correlation with nanohardness and Knoop hardness of the film, which vary within 29–33.5 and 46–48 GPa, respectively.

Original languageEnglish
Pages (from-to)697-700
Number of pages4
JournalTechnical Physics Letters
Volume41
Issue number7
DOIs
Publication statusPublished - 3 Jul 2015
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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