Abstract
DLTS measurements in H+ (65 MeV)-irradiated n-GaAs reveal a broad band near 250 to 340 K which is similar to the band in neutron-irradiated samples. DLTS evaluation and the modification of this band due to post-irradiation heat treatment indicates that it is formed by two subbands superposed on each other, so the combined band cannot be resolved fully in as-irradiated samples. The temperature position of the peak and the shape of this band are sensitive to electric fields in the compensation depletion layers of the damage clusters produced upon bombardment. The damage cluster model and the related analytical expression for the response have been extended and simulated DLTS spectra have been presented for the samples investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 229-239 |
| Number of pages | 11 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 212 |
| Issue number | 2 |
| Publication status | Published - Apr 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Brudnyi, V. N., Gradoboev, A. V., & Peshev, V. V. (1999). The broad midgap deep-level transient spectroscopy band in proton (65 MeV) and fast neutron-irradiated n-GaAs. Physica Status Solidi (B) Basic Research, 212(2), 229-239.