The broad midgap deep-level transient spectroscopy band in proton (65 MeV) and fast neutron-irradiated n-GaAs

Abstract

DLTS measurements in H⁺ (65 MeV)-irradiated n-GaAs reveal a broad band near 250 to 340 K which is similar to the band in neutron-irradiated samples. DLTS evaluation and the modification of this band due to post-irradiation heat treatment indicates that it is formed by two subbands superposed on each other, so the combined band cannot be resolved fully in as-irradiated samples. The temperature position of the peak and the shape of this band are sensitive to electric fields in the compensation depletion layers of the damage clusters produced upon bombardment. The damage cluster model and the related analytical expression for the response have been extended and simulated DLTS spectra have been presented for the samples investigated.

Original language	English
Pages (from-to)	229-239
Number of pages	11
Journal	Physica Status Solidi (B) Basic Research
Volume	212
Issue number	2
Publication status	Published - Apr 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{69b232e3efd14cf3bfe63e76fe67c29d,

title = "The broad midgap deep-level transient spectroscopy band in proton (65 MeV) and fast neutron-irradiated n-GaAs",

abstract = "DLTS measurements in H+ (65 MeV)-irradiated n-GaAs reveal a broad band near 250 to 340 K which is similar to the band in neutron-irradiated samples. DLTS evaluation and the modification of this band due to post-irradiation heat treatment indicates that it is formed by two subbands superposed on each other, so the combined band cannot be resolved fully in as-irradiated samples. The temperature position of the peak and the shape of this band are sensitive to electric fields in the compensation depletion layers of the damage clusters produced upon bombardment. The damage cluster model and the related analytical expression for the response have been extended and simulated DLTS spectra have been presented for the samples investigated.",

author = "Brudnyi, {V. N.} and Gradoboev, {A. V.} and Peshev, {V. V.}",

year = "1999",

month = apr,

language = "English",

volume = "212",

pages = "229--239",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "2",

}

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T1 - The broad midgap deep-level transient spectroscopy band in proton (65 MeV) and fast neutron-irradiated n-GaAs

AU - Brudnyi, V. N.

AU - Gradoboev, A. V.

AU - Peshev, V. V.

PY - 1999/4

Y1 - 1999/4

N2 - DLTS measurements in H+ (65 MeV)-irradiated n-GaAs reveal a broad band near 250 to 340 K which is similar to the band in neutron-irradiated samples. DLTS evaluation and the modification of this band due to post-irradiation heat treatment indicates that it is formed by two subbands superposed on each other, so the combined band cannot be resolved fully in as-irradiated samples. The temperature position of the peak and the shape of this band are sensitive to electric fields in the compensation depletion layers of the damage clusters produced upon bombardment. The damage cluster model and the related analytical expression for the response have been extended and simulated DLTS spectra have been presented for the samples investigated.

AB - DLTS measurements in H+ (65 MeV)-irradiated n-GaAs reveal a broad band near 250 to 340 K which is similar to the band in neutron-irradiated samples. DLTS evaluation and the modification of this band due to post-irradiation heat treatment indicates that it is formed by two subbands superposed on each other, so the combined band cannot be resolved fully in as-irradiated samples. The temperature position of the peak and the shape of this band are sensitive to electric fields in the compensation depletion layers of the damage clusters produced upon bombardment. The damage cluster model and the related analytical expression for the response have been extended and simulated DLTS spectra have been presented for the samples investigated.

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