The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation

M. V. Ardyshev, V. M. Ardyshev, Yu Yu Kryuchkov

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)313-315
Number of pages3
JournalFizika i Tekhnika Poluprovodnikov
Volume39
Issue number3
Publication statusPublished - 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation. / Ardyshev, M. V.; Ardyshev, V. M.; Kryuchkov, Yu Yu.

In: Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 3, 2005, p. 313-315.

Research output: Contribution to journalArticle

@article{4c14280245494079a36e955aeefcfc54,
title = "The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation",
author = "Ardyshev, {M. V.} and Ardyshev, {V. M.} and Kryuchkov, {Yu Yu}",
year = "2005",
language = "English",
volume = "39",
pages = "313--315",
journal = "Fizika i Tekhnika Poluprovodnikov",
issn = "0015-3222",
publisher = "Lzdatel'stvo Nauka",
number = "3",

}

TY - JOUR

T1 - The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation

AU - Ardyshev, M. V.

AU - Ardyshev, V. M.

AU - Kryuchkov, Yu Yu

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=24044511179&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24044511179&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:24044511179

VL - 39

SP - 313

EP - 315

JO - Fizika i Tekhnika Poluprovodnikov

JF - Fizika i Tekhnika Poluprovodnikov

SN - 0015-3222

IS - 3

ER -