The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation

M. V. Ardyshev, V. M. Ardyshev, Yu Yu Kryuchkov

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	313-315
Number of pages	3
Journal	Fizika i Tekhnika Poluprovodnikov
Volume	39
Issue number	3
Publication status	Published - 2005

ASJC Scopus subject areas

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author = "Ardyshev, {M. V.} and Ardyshev, {V. M.} and Kryuchkov, {Yu Yu}",

year = "2005",

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AU - Ardyshev, V. M.

AU - Kryuchkov, Yu Yu

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JO - Fizika i Tekhnika Poluprovodnikov

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