The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation

M. V. Ardyshev, V. M. Ardyshev, Yu Yu Kryuchkov

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)313-315
Number of pages3
JournalFizika i Tekhnika Poluprovodnikov
Volume39
Issue number3
Publication statusPublished - 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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