| Original language | English |
|---|---|
| Pages (from-to) | 313-315 |
| Number of pages | 3 |
| Journal | Fizika i Tekhnika Poluprovodnikov |
| Volume | 39 |
| Issue number | 3 |
| Publication status | Published - 2005 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
Ardyshev, M. V., Ardyshev, V. M., & Kryuchkov, Y. Y. (2005). The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation. Fizika i Tekhnika Poluprovodnikov, 39(3), 313-315.