| Original language | English |
|---|---|
| Pages (from-to) | 313-315 |
| Number of pages | 3 |
| Journal | Fizika i Tekhnika Poluprovodnikov |
| Volume | 39 |
| Issue number | 3 |
| Publication status | Published - 2005 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation. / Ardyshev, M. V.; Ardyshev, V. M.; Kryuchkov, Yu Yu.
In: Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 3, 2005, p. 313-315.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation
AU - Ardyshev, M. V.
AU - Ardyshev, V. M.
AU - Kryuchkov, Yu Yu
PY - 2005
Y1 - 2005
UR - http://www.scopus.com/inward/record.url?scp=24044511179&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=24044511179&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:24044511179
VL - 39
SP - 313
EP - 315
JO - Fizika i Tekhnika Poluprovodnikov
JF - Fizika i Tekhnika Poluprovodnikov
SN - 0015-3222
IS - 3
ER -