The accumulation of radiation defects in callium arsenide that has been subjected to pulsed and continuous ion implantation

M. V. Ardyshev, V. M. Ardyshev, Yu Yu Kryuchkov

Research output: Contribution to journalArticle

Abstract

Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with 32S, 12C, and 4He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 109-6 × 10-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.

Original languageEnglish
Pages (from-to)293-295
Number of pages3
JournalSemiconductors
Volume39
Issue number3
DOIs
Publication statusPublished - 1 Jan 2005

Fingerprint

Ion implantation
ion implantation
implantation
Ions
Radiation
Defects
defects
Rutherford backscattering spectroscopy
radiation
backscattering
ions
Current density
Irradiation
current density
dosage
electrical resistivity
irradiation
room temperature
Temperature
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

The accumulation of radiation defects in callium arsenide that has been subjected to pulsed and continuous ion implantation. / Ardyshev, M. V.; Ardyshev, V. M.; Kryuchkov, Yu Yu.

In: Semiconductors, Vol. 39, No. 3, 01.01.2005, p. 293-295.

Research output: Contribution to journalArticle

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