Abstract
Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with 32S, 12C, and 4He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 109-6 × 10-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.
| Original language | English |
|---|---|
| Pages (from-to) | 293-295 |
| Number of pages | 3 |
| Journal | Semiconductors |
| Volume | 39 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 Jan 2005 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Cite this
Ardyshev, M. V., Ardyshev, V. M., & Kryuchkov, Y. Y. (2005). The accumulation of radiation defects in callium arsenide that has been subjected to pulsed and continuous ion implantation. Semiconductors, 39(3), 293-295. https://doi.org/10.1134/1.1882789