The accumulation of radiation defects in callium arsenide that has been subjected to pulsed and continuous ion implantation

M. V. Ardyshev, V. M. Ardyshev, Yu Yu Kryuchkov

Division for Experimental Physics

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Abstract

Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with ³²S, ¹²C, and ⁴He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 10⁹-6 × 10^-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.

Original language	English
Pages (from-to)	293-295
Number of pages	3
Journal	Semiconductors
Volume	39
Issue number	3
DOIs	https://doi.org/10.1134/1.1882789
Publication status	Published - 1 Jan 2005

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Ardyshev, M. V., Ardyshev, V. M., & Kryuchkov, Y. Y. (2005). The accumulation of radiation defects in callium arsenide that has been subjected to pulsed and continuous ion implantation. Semiconductors, 39(3), 293-295. https://doi.org/10.1134/1.1882789

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10.1134/1.1882789