The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access

V. A. Varlachev, A. V. Golovatsky, E. G. Emets, Ya A. Butko

Research output: Contribution to journalConference articlepeer-review

Abstract

The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD.

Original languageEnglish
Article number012047
JournalIOP Conference Series: Materials Science and Engineering
Volume135
Issue number1
DOIs
Publication statusPublished - 2 Aug 2016
Event8th International Scientific Conference on Issues of Physics and Technology in Science, Industry and Medicine - Tomsk, Russian Federation
Duration: 1 Jun 20163 Jun 2016

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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