Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes

Raul D. Rodriguez, Evgeniya Sheremet, Dominic J. Thurmer, Daniel Lehmann, Ovidiu D. Gordan, Falko Seidel, Alexander Milekhin, Oliver G. Schmidt, Michael Hietschold, Dietrich R.T. Zahn

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Large arrays of multifunctional rolled-up semiconductors can be mass-produced with precisely controlled size and composition, making them of great technological interest for micro- and nano-scale device fabrication. The microtube behavior at different temperatures is a key factor towards further engineering their functionality, as well as for characterizing strain, defects, and temperature-dependent properties of the structures. For this purpose, we probe optical phonons of GaAs/InGaAs rolled-up microtubes using Raman spectroscopy on defect-rich (faulty) and defect-free microtubes. The microtubes are fabricated by selectively etching an AlAs sacrificial layer in order to release the strained InGaAs/GaAs bilayer, all grown by molecular beam epitaxy. Pristine microtubes show homogeneity of the GaAs and InGaAs peak positions and intensities along the tube, which indicates a defect-free rolling up process, while for a cone-like microtube, a downward shift of the GaAs LO phonon peak along the cone is observed. Formation of other type of defects, including partially unfolded microtubes, can also be related to a high Raman intensity of the TO phonon in GaAs. We argue that the appearance of the TO phonon mode is a consequence of further relaxation of the selection rules due to the defects on the tubes, which makes this phonon useful for failure detection/prediction in such rolled up systems. In order to systematically characterize the temperature stability of the rolled up microtubes, Raman spectra were acquired as a function of sample temperature up to 300°C. The reversibility of the changes in the Raman spectra of the tubes within this temperature range is demonstrated.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalNanoscale Research Letters
Volume7
DOIs
Publication statusPublished - 18 Dec 2012
Externally publishedYes

Fingerprint

Defects
defects
tubes
Temperature
temperature
Raman scattering
Cones
cones
Raman spectra
Phonons
Molecular beam epitaxy
homogeneity
Raman spectroscopy
gallium arsenide
Etching
phonons
molecular beam epitaxy
etching
engineering
Semiconductor materials

Keywords

  • Dependent Raman spectroscopy
  • Gallium arsenide
  • Gallium arsenide TO phonon
  • Microtubes
  • Raman imaging
  • Raman spectroscopy defects
  • Rolled up tubes
  • Strain imaging

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes. / Rodriguez, Raul D.; Sheremet, Evgeniya; Thurmer, Dominic J.; Lehmann, Daniel; Gordan, Ovidiu D.; Seidel, Falko; Milekhin, Alexander; Schmidt, Oliver G.; Hietschold, Michael; Zahn, Dietrich R.T.

In: Nanoscale Research Letters, Vol. 7, 18.12.2012, p. 1-5.

Research output: Contribution to journalArticle

Rodriguez, RD, Sheremet, E, Thurmer, DJ, Lehmann, D, Gordan, OD, Seidel, F, Milekhin, A, Schmidt, OG, Hietschold, M & Zahn, DRT 2012, 'Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes', Nanoscale Research Letters, vol. 7, pp. 1-5. https://doi.org/10.1186/1556-276X-7-594
Rodriguez, Raul D. ; Sheremet, Evgeniya ; Thurmer, Dominic J. ; Lehmann, Daniel ; Gordan, Ovidiu D. ; Seidel, Falko ; Milekhin, Alexander ; Schmidt, Oliver G. ; Hietschold, Michael ; Zahn, Dietrich R.T. / Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes. In: Nanoscale Research Letters. 2012 ; Vol. 7. pp. 1-5.
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AU - Seidel, Falko

AU - Milekhin, Alexander

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