Abstract
The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.
| Original language | English |
|---|---|
| Pages (from-to) | 576-578 |
| Number of pages | 3 |
| Journal | Russian Physics Journal |
| Volume | 39 |
| Issue number | 6 |
| Publication status | Published - 1996 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Zhigal'skii, A. A., Ikonnikova, L. F., Minakova, T. S., Mukhachev, V. A., & Troyan, P. E. (1996). Temperature dependence of the dielectric strength of zinc sulfide films. Russian Physics Journal, 39(6), 576-578.