Temperature dependence of the dielectric strength of zinc sulfide films

A. A. Zhigal'skii, L. F. Ikonnikova, T. S. Minakova, V. A. Mukhachev, P. E. Troyan

Research output: Contribution to journal › Article › peer-review

Abstract

The temperature dependence of the dielectric strength E_pn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the E_pn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.

Original language	English
Pages (from-to)	576-578
Number of pages	3
Journal	Russian Physics Journal
Volume	39
Issue number	6
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Temperature dependence of the dielectric strength of zinc sulfide films",

abstract = "The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.",

author = "Zhigal'skii, {A. A.} and Ikonnikova, {L. F.} and Minakova, {T. S.} and Mukhachev, {V. A.} and Troyan, {P. E.}",

year = "1996",

language = "English",

volume = "39",

pages = "576--578",

journal = "Russian Physics Journal",

issn = "1064-8887",

publisher = "Consultants Bureau",

number = "6",

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T1 - Temperature dependence of the dielectric strength of zinc sulfide films

AU - Zhigal'skii, A. A.

AU - Ikonnikova, L. F.

AU - Minakova, T. S.

AU - Mukhachev, V. A.

AU - Troyan, P. E.

PY - 1996

Y1 - 1996

N2 - The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.

AB - The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.

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