Abstract
The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.
| Original language | English |
|---|---|
| Pages (from-to) | 576-578 |
| Number of pages | 3 |
| Journal | Russian Physics Journal |
| Volume | 39 |
| Issue number | 6 |
| Publication status | Published - 1996 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Temperature dependence of the dielectric strength of zinc sulfide films. / Zhigal'skii, A. A.; Ikonnikova, L. F.; Minakova, T. S.; Mukhachev, V. A.; Troyan, P. E.
In: Russian Physics Journal, Vol. 39, No. 6, 1996, p. 576-578.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Temperature dependence of the dielectric strength of zinc sulfide films
AU - Zhigal'skii, A. A.
AU - Ikonnikova, L. F.
AU - Minakova, T. S.
AU - Mukhachev, V. A.
AU - Troyan, P. E.
PY - 1996
Y1 - 1996
N2 - The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.
AB - The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.
UR - http://www.scopus.com/inward/record.url?scp=53349107804&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=53349107804&partnerID=8YFLogxK
M3 - Article
VL - 39
SP - 576
EP - 578
JO - Russian Physics Journal
JF - Russian Physics Journal
SN - 1064-8887
IS - 6
ER -