Temperature dependence of radical recombination luminescence of zinc-sulfur crystalline phosphors

Yu I. Tyurin, Yu A. Sivov, V. D. Khoruzhi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The experiment results on temperature dependence of stationary intensity of PL (photoluminescence) and RRL (radical recombination luminescence) of ZnS-Cu and ZnSAg bands excited by hydrogen atoms are being discussed. It was established that the temperatures curves of corresponding PL and RRL ZnS-Cu and ZnS-Ag bands are appreciately different The temperature curves of PL ZnS-Cu and ZnS-Ag are the conventional curves of luminescence temperature extinguishing. The temperature curves of RRL ZnS-Cu blue and green bands have a maximum and are strongly different from those of PL. Temperature dependence of RRL ZnS-Cu light-blue and green bands are monotonous (like PL) but more sharply following down curves. The observed discrepancy of temperature dependendence of RRL and PL ZnS-Cu and ZnS Ag bands is due to the fact that in case of RRL opposite to volume photo excitation (the excitation depth is sufficiently great 1 mkm), the excited flashing centers are distributed either on the surface or inside a thin surface layer of the thickness not greater than several lattice parameters. Thus the discrepancy between RRL and PL is due to adsorption-deadsorption process on the interface of a crystal phospho It was proved that during atomic excitation luminescence as well as photoluminescence, the recombination interaction of flashing centers dominates. It leads with temperature to depositing of greater part of energy in long wave bands. In the process of RRL in comparison with PL, that effect is much greater.

Original languageEnglish
Title of host publication8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004
Pages282-285
Number of pages4
Volume2
Publication statusPublished - 2004
Event8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 - Tomsk, Russian Federation
Duration: 26 Jun 20043 Jul 2004

Other

Other8th Korea-Russia International Symposium on Science and Technology, KORUS 2004
CountryRussian Federation
CityTomsk
Period26.6.043.7.04

Fingerprint

Phosphors
Luminescence
Zinc
Sulfur
Photoluminescence
Crystalline materials
Temperature
Photoexcitation
Lattice constants
Adsorption
Atoms
Hydrogen
Crystals

Keywords

  • Adsorption
  • Excitation dependence
  • Hydrogen
  • Interaction
  • Luminescence
  • Molecules
  • Phosphors
  • Recombination
  • Surfase

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Tyurin, Y. I., Sivov, Y. A., & Khoruzhi, V. D. (2004). Temperature dependence of radical recombination luminescence of zinc-sulfur crystalline phosphors. In 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004 (Vol. 2, pp. 282-285)

Temperature dependence of radical recombination luminescence of zinc-sulfur crystalline phosphors. / Tyurin, Yu I.; Sivov, Yu A.; Khoruzhi, V. D.

8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Vol. 2 2004. p. 282-285.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tyurin, YI, Sivov, YA & Khoruzhi, VD 2004, Temperature dependence of radical recombination luminescence of zinc-sulfur crystalline phosphors. in 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. vol. 2, pp. 282-285, 8th Korea-Russia International Symposium on Science and Technology, KORUS 2004, Tomsk, Russian Federation, 26.6.04.
Tyurin YI, Sivov YA, Khoruzhi VD. Temperature dependence of radical recombination luminescence of zinc-sulfur crystalline phosphors. In 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Vol. 2. 2004. p. 282-285
Tyurin, Yu I. ; Sivov, Yu A. ; Khoruzhi, V. D. / Temperature dependence of radical recombination luminescence of zinc-sulfur crystalline phosphors. 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Vol. 2 2004. pp. 282-285
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AB - The experiment results on temperature dependence of stationary intensity of PL (photoluminescence) and RRL (radical recombination luminescence) of ZnS-Cu and ZnSAg bands excited by hydrogen atoms are being discussed. It was established that the temperatures curves of corresponding PL and RRL ZnS-Cu and ZnS-Ag bands are appreciately different The temperature curves of PL ZnS-Cu and ZnS-Ag are the conventional curves of luminescence temperature extinguishing. The temperature curves of RRL ZnS-Cu blue and green bands have a maximum and are strongly different from those of PL. Temperature dependence of RRL ZnS-Cu light-blue and green bands are monotonous (like PL) but more sharply following down curves. The observed discrepancy of temperature dependendence of RRL and PL ZnS-Cu and ZnS Ag bands is due to the fact that in case of RRL opposite to volume photo excitation (the excitation depth is sufficiently great 1 mkm), the excited flashing centers are distributed either on the surface or inside a thin surface layer of the thickness not greater than several lattice parameters. Thus the discrepancy between RRL and PL is due to adsorption-deadsorption process on the interface of a crystal phospho It was proved that during atomic excitation luminescence as well as photoluminescence, the recombination interaction of flashing centers dominates. It leads with temperature to depositing of greater part of energy in long wave bands. In the process of RRL in comparison with PL, that effect is much greater.

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