Temperature dependence of accumulation of radiation defects in ionic crystals

Abstract

The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

Original language	English
Pages (from-to)	181-184
Number of pages	4
Journal	Soviet Physics Journal
Volume	22
Issue number	2
DOIs	https://doi.org/10.1007/BF00892014
Publication status	Published - Feb 1979

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1007/BF00892014

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Lisitsyn, V. M. (1979). Temperature dependence of accumulation of radiation defects in ionic crystals. Soviet Physics Journal, 22(2), 181-184. https://doi.org/10.1007/BF00892014

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title = "Temperature dependence of accumulation of radiation defects in ionic crystals",

abstract = "The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.",

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