Temperature dependence of accumulation of radiation defects in ionic crystals

Division for Materials Science

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Abstract

The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

Original language	English
Pages (from-to)	181-184
Number of pages	4
Journal	Soviet Physics Journal
Volume	22
Issue number	2
DOIs	https://doi.org/10.1007/BF00892014
Publication status	Published - Feb 1979

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ASJC Scopus subject areas

Physics and Astronomy(all)

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Lisitsyn, V. M. (1979). Temperature dependence of accumulation of radiation defects in ionic crystals. Soviet Physics Journal, 22(2), 181-184. https://doi.org/10.1007/BF00892014

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10.1007/BF00892014