Temperature dependence of accumulation of radiation defects in ionic crystals

Division for Materials Science

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Abstract

The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

Original language	English
Pages (from-to)	181-184
Number of pages	4
Journal	Soviet Physics Journal
Volume	22
Issue number	2
DOIs	https://doi.org/10.1007/BF00892014
Publication status	Published - Feb 1979

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1007/BF00892014

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title = "Temperature dependence of accumulation of radiation defects in ionic crystals",

abstract = "The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.",

author = "Lisitsyn, {V. M.}",

year = "1979",

month = feb,

doi = "10.1007/BF00892014",

language = "English",

volume = "22",

pages = "181--184",

journal = "Russian Physics Journal",

issn = "1064-8887",

publisher = "Consultants Bureau",

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PY - 1979/2

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AB - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

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