Abstract
The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.
| Original language | English |
|---|---|
| Pages (from-to) | 181-184 |
| Number of pages | 4 |
| Journal | Soviet Physics Journal |
| Volume | 22 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Feb 1979 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Temperature dependence of accumulation of radiation defects in ionic crystals. / Lisitsyn, V. M.
In: Soviet Physics Journal, Vol. 22, No. 2, 02.1979, p. 181-184.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Temperature dependence of accumulation of radiation defects in ionic crystals
AU - Lisitsyn, V. M.
PY - 1979/2
Y1 - 1979/2
N2 - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.
AB - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.
UR - http://www.scopus.com/inward/record.url?scp=34250256772&partnerID=8YFLogxK
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U2 - 10.1007/BF00892014
DO - 10.1007/BF00892014
M3 - Article
VL - 22
SP - 181
EP - 184
JO - Russian Physics Journal
JF - Russian Physics Journal
SN - 1064-8887
IS - 2
ER -