Temperature dependence of accumulation of radiation defects in ionic crystals

Research output: Contribution to journalArticle

Abstract

The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

Original languageEnglish
Pages (from-to)181-184
Number of pages4
JournalSoviet Physics Journal
Volume22
Issue number2
DOIs
Publication statusPublished - Feb 1979

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ionic crystals
temperature dependence
defects
radiation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Temperature dependence of accumulation of radiation defects in ionic crystals. / Lisitsyn, V. M.

In: Soviet Physics Journal, Vol. 22, No. 2, 02.1979, p. 181-184.

Research output: Contribution to journalArticle

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