Technological peculiarities of deposition anti-reflective layers in low-e coatings

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Abstract

This article reports on the investigation of technological features magnetron sputtering for deposition anti-reflection layers in low-emission (low-e) coatings. The three-layer TiO2-Cu-TiO2 films were deposited by dual and planar magnetron sputtering systems (MS) on glass substrate. Studies of the current-voltage characteristics (CVC) and the hysteresis effect show that deposition of anti-reflection layers is possible in the transition mode with higher rates. For planar magnetron, the stability of electrical discharge parameters is achieved at 60 % O2 content in mixture. The calculations optical band gap Eg show that anti-reflective films have a rutile or anatase phases that depending on the content O2 in gas mixture. The optimum deposition conditions of TiO2 films were determined for all modifications of magnetrons. Anti-reflective layers, which are deposited by balanced dual MS, improve the transparency of low-e coatings (integral TVIS increase in 15%).

Original languageEnglish
Article number012018
JournalJournal of Physics: Conference Series
Volume479
Issue number1
DOIs
Publication statusPublished - 2013

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coatings
magnetron sputtering
magnetrons
anatase
rutile
gas mixtures
hysteresis
glass
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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title = "Technological peculiarities of deposition anti-reflective layers in low-e coatings",
abstract = "This article reports on the investigation of technological features magnetron sputtering for deposition anti-reflection layers in low-emission (low-e) coatings. The three-layer TiO2-Cu-TiO2 films were deposited by dual and planar magnetron sputtering systems (MS) on glass substrate. Studies of the current-voltage characteristics (CVC) and the hysteresis effect show that deposition of anti-reflection layers is possible in the transition mode with higher rates. For planar magnetron, the stability of electrical discharge parameters is achieved at 60 {\%} O2 content in mixture. The calculations optical band gap Eg show that anti-reflective films have a rutile or anatase phases that depending on the content O2 in gas mixture. The optimum deposition conditions of TiO2 films were determined for all modifications of magnetrons. Anti-reflective layers, which are deposited by balanced dual MS, improve the transparency of low-e coatings (integral TVIS increase in 15{\%}).",
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