Synthesis of Polycrystalline Diamond Films in Abnormal Glow Discharge and their Properties

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Abstract

The optical and electrophysical properties of polycrystalline diamond films (PDF) deposited from the abnormal glow discharge have been studied. The dominating mechanisms of absorption and charge carrier transfer and the energy spectrum of the localized states (LS) of defects which determine the properties of the films have been specified. The parameters of the interband absorption and electrical conductivity are determined by the continuous energy distribution in the band gap (BG) of the states of defects of different nature. The absorption edge of the crystalline phase of the films is separated from the absorption zone determined by the electron transitions between LS defects. The width of BG is narrowed to 0.2-0.5 eV from the quantity typical to the diamond. An additional film absorption edge is formed in the energy interval 1.2-3.3 eV, where Urbach rule is fulfilled and the interband absorption is realized at direct transitions through the optical gap 1.1-1.5 eV. The average width of BG is 2.6-3.24 eV estimated within semiclassical interband model. The interaction of the parameters of the interband and exponential absorption is determined by the crystal lattice static disorder. The dominating n-type of the activation component of the electrical conductivity is complemented by the hopping mechanism with the participation of the localized states of the defects distributed near the Fermi level with a density 5.6T017-2.1•1021 eV-1-cm-3.

Original languageEnglish
Article number012029
JournalJournal of Physics: Conference Series
Volume652
Issue number1
DOIs
Publication statusPublished - 5 Nov 2015

Fingerprint

diamond films
glow discharges
synthesis
defects
electrical resistivity
electron transitions
crystal lattices
charge carriers
energy distribution
energy spectra
diamonds
activation
disorders
intervals
optical properties
conductivity
interactions

Keywords

  • absorption
  • electrical conductivity
  • localized states of defects
  • photoconductivity
  • polycrystalline diamond films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{802a3960238147a4a6d2d34dc8dc86b6,
title = "Synthesis of Polycrystalline Diamond Films in Abnormal Glow Discharge and their Properties",
abstract = "The optical and electrophysical properties of polycrystalline diamond films (PDF) deposited from the abnormal glow discharge have been studied. The dominating mechanisms of absorption and charge carrier transfer and the energy spectrum of the localized states (LS) of defects which determine the properties of the films have been specified. The parameters of the interband absorption and electrical conductivity are determined by the continuous energy distribution in the band gap (BG) of the states of defects of different nature. The absorption edge of the crystalline phase of the films is separated from the absorption zone determined by the electron transitions between LS defects. The width of BG is narrowed to 0.2-0.5 eV from the quantity typical to the diamond. An additional film absorption edge is formed in the energy interval 1.2-3.3 eV, where Urbach rule is fulfilled and the interband absorption is realized at direct transitions through the optical gap 1.1-1.5 eV. The average width of BG is 2.6-3.24 eV estimated within semiclassical interband model. The interaction of the parameters of the interband and exponential absorption is determined by the crystal lattice static disorder. The dominating n-type of the activation component of the electrical conductivity is complemented by the hopping mechanism with the participation of the localized states of the defects distributed near the Fermi level with a density 5.6T017-2.1•1021 eV-1-cm-3.",
keywords = "absorption, electrical conductivity, localized states of defects, photoconductivity, polycrystalline diamond films",
author = "Gaydaychuk, {A. V.} and Linnik, {S. A.} and Kabyshev, {A. V.} and Konusov, {Fedor Valerievich} and Remnev, {G. E.}",
year = "2015",
month = "11",
day = "5",
doi = "10.1088/1742-6596/652/1/012029",
language = "English",
volume = "652",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Synthesis of Polycrystalline Diamond Films in Abnormal Glow Discharge and their Properties

AU - Gaydaychuk, A. V.

AU - Linnik, S. A.

AU - Kabyshev, A. V.

AU - Konusov, Fedor Valerievich

AU - Remnev, G. E.

PY - 2015/11/5

Y1 - 2015/11/5

N2 - The optical and electrophysical properties of polycrystalline diamond films (PDF) deposited from the abnormal glow discharge have been studied. The dominating mechanisms of absorption and charge carrier transfer and the energy spectrum of the localized states (LS) of defects which determine the properties of the films have been specified. The parameters of the interband absorption and electrical conductivity are determined by the continuous energy distribution in the band gap (BG) of the states of defects of different nature. The absorption edge of the crystalline phase of the films is separated from the absorption zone determined by the electron transitions between LS defects. The width of BG is narrowed to 0.2-0.5 eV from the quantity typical to the diamond. An additional film absorption edge is formed in the energy interval 1.2-3.3 eV, where Urbach rule is fulfilled and the interband absorption is realized at direct transitions through the optical gap 1.1-1.5 eV. The average width of BG is 2.6-3.24 eV estimated within semiclassical interband model. The interaction of the parameters of the interband and exponential absorption is determined by the crystal lattice static disorder. The dominating n-type of the activation component of the electrical conductivity is complemented by the hopping mechanism with the participation of the localized states of the defects distributed near the Fermi level with a density 5.6T017-2.1•1021 eV-1-cm-3.

AB - The optical and electrophysical properties of polycrystalline diamond films (PDF) deposited from the abnormal glow discharge have been studied. The dominating mechanisms of absorption and charge carrier transfer and the energy spectrum of the localized states (LS) of defects which determine the properties of the films have been specified. The parameters of the interband absorption and electrical conductivity are determined by the continuous energy distribution in the band gap (BG) of the states of defects of different nature. The absorption edge of the crystalline phase of the films is separated from the absorption zone determined by the electron transitions between LS defects. The width of BG is narrowed to 0.2-0.5 eV from the quantity typical to the diamond. An additional film absorption edge is formed in the energy interval 1.2-3.3 eV, where Urbach rule is fulfilled and the interband absorption is realized at direct transitions through the optical gap 1.1-1.5 eV. The average width of BG is 2.6-3.24 eV estimated within semiclassical interband model. The interaction of the parameters of the interband and exponential absorption is determined by the crystal lattice static disorder. The dominating n-type of the activation component of the electrical conductivity is complemented by the hopping mechanism with the participation of the localized states of the defects distributed near the Fermi level with a density 5.6T017-2.1•1021 eV-1-cm-3.

KW - absorption

KW - electrical conductivity

KW - localized states of defects

KW - photoconductivity

KW - polycrystalline diamond films

UR - http://www.scopus.com/inward/record.url?scp=84957812456&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957812456&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/652/1/012029

DO - 10.1088/1742-6596/652/1/012029

M3 - Article

AN - SCOPUS:84957812456

VL - 652

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012029

ER -